β−(Al0.19 Ga0.81)2 O3/Ga2 O3 Modulation-Doped Field-Effect Transistors with > 6 kV Breakdown
Abstract
β−(Al0.19 Ga0.81)2 O3/Ga2 O3 modulation-doped field-effect transistors (MODFETs) incorporating a high-quality Al2O3 gate dielectric and SiNx passivation are demonstrated for high-voltage operation. The devices exhibited a maximum drain current of 54 mA/mm, an on-resistance of 149 Ohm.mm, a minimum subthreshold slope of 94 mV/dec, and an ION/IOFF ratio exceeding 108. Three-terminal breakdown measurements performed in Flourinert demonstrated a breakdown voltage that increased with gate-drain spacing, reaching 6.6 kV for a device with LGD = 28 microns. The corresponding average lateral electric field approached 2.4 MV/cm, while a power figure of merit of 222 MW/cm2 was achieved. To the best of the authors knowledge, the demonstrated breakdown voltage represents the highest reported value for a β−(Alx Ga1−x)2 O3/Ga2 O3 MODFET and highlights the potential of modulation-doped β-Ga2O3 heterostructures for next-generation multi-kV power devices.
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BibTeX
@misc{saga2026βal019,
title = {{$β-(Al_0.19 Ga_0.81)_2 O_3/Ga_2 O_3$ Modulation-Doped Field-Effect Transistors with $>$ 6 kV Breakdown}},
author = {Julian Gervassi Saga and Joshua T Buontempo and Nabasindhu Das and Advait Gilankar and Hari P Nair and Nidhin Kurian Kalarickal},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.06414},
eprint = {2609.06414},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.06414},
}
RIS
TY - UNPB
TI - β−(Al_0.19 Ga_0.81)_2 O_3/Ga_2 O_3 Modulation-Doped Field-Effect Transistors with > 6 kV Breakdown
AU - Julian Gervassi Saga
AU - Joshua T Buontempo
AU - Nabasindhu Das
AU - Advait Gilankar
AU - Hari P Nair
AU - Nidhin Kurian Kalarickal
PY - 2026
DA - 2026/09/06
PB - arXiv
DO - 10.48550/arxiv.2609.06414
UR - https://arxiv.org/abs/2609.06414
AB - β−(Al_0.19 Ga_0.81)_2 O_3/Ga_2 O_3 modulation-doped field-effect transistors (MODFETs) incorporating a high-quality Al2O3 gate dielectric and SiNx passivation are demonstrated for high-voltage operation. The devices exhibited a maximum drain current of 54 mA/mm, an on-resistance of 149 Ohm.mm, a minimum subthreshold slope of 94 mV/dec, and an ION/IOFF ratio exceeding 10^8. Three-terminal breakdown measurements performed in Flourinert demonstrated a breakdown voltage that increased with gate-drain spacing, reaching 6.6 kV for a device with LGD = 28 microns. The corresponding average lateral electric field approached 2.4 MV/cm, while a power figure of merit of 222 MW/cm2 was achieved. To the best of the authors knowledge, the demonstrated breakdown voltage represents the highest reported value for a β−(Al_x Ga_1−x)_2 O_3/Ga_2 O_3 MODFET and highlights the potential of modulation-doped β-Ga2O3 heterostructures for next-generation multi-kV power devices.
ER -