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Peer-reviewedCC BYAPL Electronic Devices

High breakdown field multi-kV UWBG AlGaN transistors

  • Seungheon Shin1
  • Kyle J. Liddy2
  • Jonathan Pratt1
  • Can Cao1
  • Yinxuan Zhu1
  • Brianna Klein3
  • Andrew M. Armstrong3
  • Andrew A. Allerman3
  • Siddharth Rajan1,4
4 affiliations
  1. 1Department of Electrical and Computer Engineering, The Ohio State University 1 , Columbus, Ohio 43210,
  2. 2Air Force Research Laboratory, Information and Spectrum Warfare Directorate, Wright-Patterson AFB 2 , Dayton, Ohio 45433,
  3. 3Sandia National Laboratories 3 , Albuquerque, New Mexico 87123,
  4. 4Department of Materials Science and Engineering, The Ohio State University 4 , Columbus, Ohio 43210,
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Abstract

We demonstrate high-performance UWBG AlGaN PolFETs exhibiting a state-of-the-art combination of nearly 1 A/mm on-state current (∼960 mA/mm) and a large breakdown field (>4.8 MV/cm) in high carrier density (1.15 × 1013 cm−2). Multi-kV robustness is successfully demonstrated, exhibiting 1.28 and 2.17 kV by utilizing a gate-connected field plate structure in 3.9 and 6.8 μm LGD, corresponding to the extremely low specific on-resistance of 1.25 and 2.86 mΩ cm2, respectively. High RF performance is also achieved, providing fT and fMAX of 8.5 and 15 GHz, respectively, for 3.9 μm LGD. These results highlight UWBG AlGaN as a platform for both high-voltage RF and power applications.

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Cite

BibTeXRIS
BibTeX
@article{shin2026high,
  title = {{High breakdown field multi-kV UWBG AlGaN transistors}},
  author = {Seungheon Shin and Kyle J. Liddy and Jonathan Pratt and Can Cao and Yinxuan Zhu and Brianna Klein and Andrew M. Armstrong and Andrew A. Allerman and Siddharth Rajan},
  journal = {APL Electronic Devices},
  year = {2026},
  month = may,
  doi = {10.1063/5.0337643},
  url = {https://doi.org/10.1063/5.0337643},
  note = {CC BY},
}
RIS
TY  - JOUR
TI  - High breakdown field multi-kV UWBG AlGaN transistors
AU  - Seungheon Shin
AU  - Kyle J. Liddy
AU  - Jonathan Pratt
AU  - Can Cao
AU  - Yinxuan Zhu
AU  - Brianna Klein
AU  - Andrew M. Armstrong
AU  - Andrew A. Allerman
AU  - Siddharth Rajan
PY  - 2026
DA  - 2026/05/26
JO  - APL Electronic Devices
DO  - 10.1063/5.0337643
UR  - https://doi.org/10.1063/5.0337643
AB  - We demonstrate high-performance UWBG AlGaN PolFETs exhibiting a state-of-the-art combination of nearly 1 A/mm on-state current (∼960 mA/mm) and a large breakdown field (>4.8 MV/cm) in high carrier density (1.15 × 1013 cm−2). Multi-kV robustness is successfully demonstrated, exhibiting 1.28 and 2.17 kV by utilizing a gate-connected field plate structure in 3.9 and 6.8 μm LGD, corresponding to the extremely low specific on-resistance of 1.25 and 2.86 mΩ cm2, respectively. High RF performance is also achieved, providing fT and fMAX of 8.5 and 15 GHz, respectively, for 3.9 μm LGD. These results highlight UWBG AlGaN as a platform for both high-voltage RF and power applications.
SN  - 2995-8423
ER  -