Efficient non-volatile electric control of magnetosensing in CrSBr
Abstract
In two-dimensional crystals, electrostatic gating can modulate the charge carrier density, thereby tuning their electrical properties. In magnetic materials such as CrSBr, this approach can also enable direct electrical control of magnetoresistance. Non-volatile gating is particularly attractive since it allows the carrier density to be maintained at a desired level without the need for a continuous gate bias, offering significant advantages for technological applications. Here, we demonstrate a simple device architecture in which a solution-processed ferroelectric P(VDF-TrFE) layer is integrated directly onto a CrSBr channel, enabling non-volatile control of its magnetoresistance. We investigate the magnetotransport response over a broad temperature range and demonstrate a reproducible and robust gate dependence. Notably, the ferroelectric gate achieves a gating efficiency approximately one order of magnitude higher than that of a conventional SiO2 dielectric, highlighting the potential of ferroelectric gating for electrical control of 2D magnetic materials.
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BibTeX
@misc{fulop2026efficient,
title = {{Efficient non-volatile electric control of magnetosensing in CrSBr}},
author = {Bálint Fülöp and Yeonsu Jeong and Sofia Ferreira-Teixeira and Covadonga Álvarez-García and Tamás Prok and Xiaomin Guo and Endre Tóvári and Jong Hoon Jung and Luis Hueso and Paolo Samori and Marco Gobbi and Péter Makk and Szabolcs Csonka},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.12529},
eprint = {2609.12529},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.12529},
}
RIS
TY - UNPB
TI - Efficient non-volatile electric control of magnetosensing in CrSBr
AU - Bálint Fülöp
AU - Yeonsu Jeong
AU - Sofia Ferreira-Teixeira
AU - Covadonga Álvarez-García
AU - Tamás Prok
AU - Xiaomin Guo
AU - Endre Tóvári
AU - Jong Hoon Jung
AU - Luis Hueso
AU - Paolo Samori
AU - Marco Gobbi
AU - Péter Makk
AU - Szabolcs Csonka
PY - 2026
DA - 2026/09/11
PB - arXiv
DO - 10.48550/arxiv.2609.12529
UR - https://arxiv.org/abs/2609.12529
AB - In two-dimensional crystals, electrostatic gating can modulate the charge carrier density, thereby tuning their electrical properties. In magnetic materials such as CrSBr, this approach can also enable direct electrical control of magnetoresistance. Non-volatile gating is particularly attractive since it allows the carrier density to be maintained at a desired level without the need for a continuous gate bias, offering significant advantages for technological applications. Here, we demonstrate a simple device architecture in which a solution-processed ferroelectric P(VDF-TrFE) layer is integrated directly onto a CrSBr channel, enabling non-volatile control of its magnetoresistance. We investigate the magnetotransport response over a broad temperature range and demonstrate a reproducible and robust gate dependence. Notably, the ferroelectric gate achieves a gating efficiency approximately one order of magnitude higher than that of a conventional SiO_2 dielectric, highlighting the potential of ferroelectric gating for electrical control of 2D magnetic materials.
ER -