Unveiling the reactivity of Cu(In 0.7 Ga 0.3 )Se 2 Absorbers Induced by High Relative Humidity and Illumination: Insights From Surface to Bulk
Abstract
Since Cu(In x Ga 1 − x )Se 2 (CIGS) absorbers are among the most efficient materials for photovoltaic energy conversion, it is crucial to understand their degradation mechanisms and the key factors driving them. To do so, we present aging studies up to 2000 h at 80% relative humidity and 20°C, first under illumination and then in the dark. Three complementary techniques are used to unveil the evolution of the absorber at different probing depths. Surface and subsurface chemical reactivities are investigated, respectively, thanks to XPS (x‐ray Photoelectron Spectroscopy) and HaXPES (Hard x‐ray Photoemission Spectroscopy) characterizations (probing from 3 up to 41 nm). In addition, EDS (Energy Dispersive Spectroscopy) measurements unveil the bulk chemical reactivity at 0.7 and 1.3 µm. The main result is a greater sensitivity of the absorber's surface when RH is combined with light rather than dark exposure, which triggers the CIGS network faster, leading to oxide phase growth, Se 0 side phases appearance, and Na diffusion. This shows that the degradation is boosted in the presence of light. On the other hand, the CIGS bulk results intact around 1 µm under all the ambient conditions investigated.
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BibTeX
@article{gagliardi2026unveiling,
title = {{Unveiling the reactivity of Cu(In 0.7 Ga 0.3 )Se 2 Absorbers Induced by High Relative Humidity and Illumination: Insights From Surface to Bulk}},
author = {Anna Gagliardi and Olivier Heintz and Anna Krystianiak and Thierry Conard and Derese Desta and Amelle Rebai and Negar Naghavi and Arnaud Etcheberry and Jean‐françois Guillemoles and Muriel Bouttemy and Solène Béchu},
journal = {Small},
year = {2026},
month = aug,
doi = {10.1002/smll.75147},
url = {https://hal.science/hal-05731777v1},
note = {CC BY 4.0},
}
RIS
TY - JOUR
TI - Unveiling the reactivity of Cu(In 0.7 Ga 0.3 )Se 2 Absorbers Induced by High Relative Humidity and Illumination: Insights From Surface to Bulk
AU - Anna Gagliardi
AU - Olivier Heintz
AU - Anna Krystianiak
AU - Thierry Conard
AU - Derese Desta
AU - Amelle Rebai
AU - Negar Naghavi
AU - Arnaud Etcheberry
AU - Jean‐françois Guillemoles
AU - Muriel Bouttemy
AU - Solène Béchu
PY - 2026
DA - 2026/08/17
JO - Small
DO - 10.1002/smll.75147
UR - https://hal.science/hal-05731777v1
AB - Since Cu(In x Ga 1 − x )Se 2 (CIGS) absorbers are among the most efficient materials for photovoltaic energy conversion, it is crucial to understand their degradation mechanisms and the key factors driving them. To do so, we present aging studies up to 2000 h at 80% relative humidity and 20°C, first under illumination and then in the dark. Three complementary techniques are used to unveil the evolution of the absorber at different probing depths. Surface and subsurface chemical reactivities are investigated, respectively, thanks to XPS (x‐ray Photoelectron Spectroscopy) and HaXPES (Hard x‐ray Photoemission Spectroscopy) characterizations (probing from 3 up to 41 nm). In addition, EDS (Energy Dispersive Spectroscopy) measurements unveil the bulk chemical reactivity at 0.7 and 1.3 µm. The main result is a greater sensitivity of the absorber's surface when RH is combined with light rather than dark exposure, which triggers the CIGS network faster, leading to oxide phase growth, Se 0 side phases appearance, and Na diffusion. This shows that the degradation is boosted in the presence of light. On the other hand, the CIGS bulk results intact around 1 µm under all the ambient conditions investigated.
SN - 1613-6810
SN - 1613-6829
ER -