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PreprintCC BY 4.0arXiv

Ultralow-Tensile Strain Enables Exciton Funneling and Energy Transfer to Boost MoSe2 Photoluminescence Quantum Yield

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Abstract

Strain engineering is a powerful route for controlling the exciton dynamics in van der Waals (vdW) heterostructures (HSs). The interlayer energy transfer (ET) process is another key factor in controlling the photocarrier relaxation pathways in vdW HSs. In this work, we combine these two processes to achieve an 8-fold enhancement to the relative photoluminescence (PL) quantum yield (QY) in a HS formed from monolayers of ReS2 and MoSe2, separated by a thin hBN interlayer, placed onto an hBN bubble. We achieve this enhancement by applying only 0.1% biaxial tensile strain, which results in efficient exciton funneling and an increased transition dipole moment. Our experimental data are supported by first-principles density-functional theory and coherent transfer-matrix method calculations, ruling out optical interference as the dominant origin of the enhancement. This work provides an innovative route for enhancing the PL QY of vdW materials via interplay between the tensile strain and the ET process.

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BibTeX
@misc{gayatri2026ultralowtensile,
  title = {{Ultralow-Tensile Strain Enables Exciton Funneling and Energy Transfer to Boost MoSe2 Photoluminescence Quantum Yield}},
  author = {Gayatri and Mehdi Arfaoui and Debashish Das and Mateusz Raczyński and Marta Bilska and Piotr Tatarczak and Aleksandra Krystyna Dąbrowska and Tomasz Kazimierczuk and Takashi Taniguchi and Kenji Watanabe and Piotr Kossacki and Andrzej Wysmołek and Saroj Kumar Nayak and Adam Babiński and Johannes Binder and Maciej R. Molas and Arka Karmakar},
  howpublished = {arXiv},
  year = {2026},
  month = sep,
  doi = {10.48550/arxiv.2609.20387},
  eprint = {2609.20387},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2609.20387},
  note = {CC BY 4.0},
}
RIS
TY  - UNPB
TI  - Ultralow-Tensile Strain Enables Exciton Funneling and Energy Transfer to Boost MoSe2 Photoluminescence Quantum Yield
AU  - Gayatri
AU  - Mehdi Arfaoui
AU  - Debashish Das
AU  - Mateusz Raczyński
AU  - Marta Bilska
AU  - Piotr Tatarczak
AU  - Aleksandra Krystyna Dąbrowska
AU  - Tomasz Kazimierczuk
AU  - Takashi Taniguchi
AU  - Kenji Watanabe
AU  - Piotr Kossacki
AU  - Andrzej Wysmołek
AU  - Saroj Kumar Nayak
AU  - Adam Babiński
AU  - Johannes Binder
AU  - Maciej R. Molas
AU  - Arka Karmakar
PY  - 2026
DA  - 2026/09/17
PB  - arXiv
DO  - 10.48550/arxiv.2609.20387
UR  - https://arxiv.org/abs/2609.20387
AB  - Strain engineering is a powerful route for controlling the exciton dynamics in van der Waals (vdW) heterostructures (HSs). The interlayer energy transfer (ET) process is another key factor in controlling the photocarrier relaxation pathways in vdW HSs. In this work, we combine these two processes to achieve an 8-fold enhancement to the relative photoluminescence (PL) quantum yield (QY) in a HS formed from monolayers of ReS2 and MoSe2, separated by a thin hBN interlayer, placed onto an hBN bubble. We achieve this enhancement by applying only 0.1% biaxial tensile strain, which results in efficient exciton funneling and an increased transition dipole moment. Our experimental data are supported by first-principles density-functional theory and coherent transfer-matrix method calculations, ruling out optical interference as the dominant origin of the enhancement. This work provides an innovative route for enhancing the PL QY of vdW materials via interplay between the tensile strain and the ET process.
ER  -