Intrinsically Conductive Films of Ag2Te Nanocrystals for Broadband Infrared Photodetection beyond 2000 nm.
4 affiliations
- 1Department of Materials Science and Engineering and Centre for Functional Photonics (CFP), City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong SAR999077, People's Republic of China.
- 2Institute of Solid State Chemistry of the Ural Branch of the Russian Academy of Sciences, 91 Pervomaiskaya Str., Ekaterinburg620990, Russia.
- 3Department of Physics and William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong SAR999077, People's Republic of China.
- 4School of Science and Engineering and Guangdong Basic Research Center of Excellence for Aggregate Science, Chinese University of Hong Kong, Shenzhen, Guangdong518172, People's Republic of China.
Abstract
We report a rapid, up-scalable synthesis in an aprotic solvent to obtain Ag2Te nanocrystals that are intrinsically capped with a short, conductive thiol ligand, making them suitable for optoelectronic applications. The simultaneous use of labile and stable tellurium precursors controlled the reaction kinetics and enabled growth of nonbranched, highly crystalline Ag2Te nanocrystals, with well pronounced excitonic peaks and an absorption edge extending beyond 2000 nm. We also realized synthesis of either n-type or p-type Ag2Te nanocrystals by simply tuning their stoichiometry. Using Ag2Te nanocrystal inks, we fabricated infrared photodetectors in a phototransistor configuration, with a high responsivity above 2 A/W and a specific detectivity under broadband illumination reaching 1011 Jones at 160 K, and rise and fall times of 50 and 80 μs, fast enough to resolve kilohertz-scale optical modulation. Our study encourages development of heavy-metal-free nanocrystals for infrared optoelectronic devices operating at temperatures accessible to commercial Peltier coolers.
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BibTeX
@article{huo2026intrinsically,
title = {{Intrinsically Conductive Films of Ag2Te Nanocrystals for Broadband Infrared Photodetection beyond 2000 nm.}},
author = {Yuanfei Huo and Yulia V Kuznetsova and Anastasiia V Sokolova and Chenxi Guo and Aleksandr A Sergeev and Kam Sing Wong and Kseniia A Sergeeva and Andrey L Rogach},
journal = {Nano letters},
year = {2026},
month = sep,
doi = {10.1021/acs.nanolett.6c03525},
url = {https://europepmc.org/article/MED/42916644},
note = {CC BY},
}
RIS
TY - JOUR
TI - Intrinsically Conductive Films of Ag2Te Nanocrystals for Broadband Infrared Photodetection beyond 2000 nm.
AU - Yuanfei Huo
AU - Yulia V Kuznetsova
AU - Anastasiia V Sokolova
AU - Chenxi Guo
AU - Aleksandr A Sergeev
AU - Kam Sing Wong
AU - Kseniia A Sergeeva
AU - Andrey L Rogach
PY - 2026
DA - 2026/09/01
JO - Nano letters
DO - 10.1021/acs.nanolett.6c03525
UR - https://europepmc.org/article/MED/42916644
AB - We report a rapid, up-scalable synthesis in an aprotic solvent to obtain Ag2Te nanocrystals that are intrinsically capped with a short, conductive thiol ligand, making them suitable for optoelectronic applications. The simultaneous use of labile and stable tellurium precursors controlled the reaction kinetics and enabled growth of nonbranched, highly crystalline Ag2Te nanocrystals, with well pronounced excitonic peaks and an absorption edge extending beyond 2000 nm. We also realized synthesis of either n-type or p-type Ag2Te nanocrystals by simply tuning their stoichiometry. Using Ag2Te nanocrystal inks, we fabricated infrared photodetectors in a phototransistor configuration, with a high responsivity above 2 A/W and a specific detectivity under broadband illumination reaching 1011 Jones at 160 K, and rise and fall times of 50 and 80 μs, fast enough to resolve kilohertz-scale optical modulation. Our study encourages development of heavy-metal-free nanocrystals for infrared optoelectronic devices operating at temperatures accessible to commercial Peltier coolers.
SN - 1530-6984
SN - 1530-6992
ER -