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Peer-reviewedCC BYMicromachines

Design-Space Exploration of Sensing Margin in 1T-nC Ferroelectric Random-Access Memory Considering Capacitor Length and Electrode Work Function Variations

  • Jehyeok Jung1
  • Munhyeon Kim2
  • Sihyun Kim1
  1. 1Department of Electronic Engineering, Sogang University, Seoul 04107, Republic of Korea;
  2. 2Department of Electrical and Information Engineering, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea
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Cite

BibTeXRIS
BibTeX
@article{jung2026designspace,
  title = {{Design-Space Exploration of Sensing Margin in 1T-nC Ferroelectric Random-Access Memory Considering Capacitor Length and Electrode Work Function Variations}},
  author = {Jehyeok Jung and Munhyeon Kim and Sihyun Kim},
  journal = {Micromachines},
  year = {2026},
  month = sep,
  url = {https://europepmc.org/article/PMC/PMC13707200},
  note = {CC BY},
}
RIS
TY  - JOUR
TI  - Design-Space Exploration of Sensing Margin in 1T-nC Ferroelectric Random-Access Memory Considering Capacitor Length and Electrode Work Function Variations
AU  - Jehyeok Jung
AU  - Munhyeon Kim
AU  - Sihyun Kim
PY  - 2026
DA  - 2026/09/27
JO  - Micromachines
UR  - https://europepmc.org/article/PMC/PMC13707200
SN  - 2072-666X
ER  -