Origin of bias-voltage-dependent transient negative capacitance in PZT ferroelectric capacitor with labyrinthine-like domains
Abstract
We investigated how the bias-voltage-dependent variation in the ferroelectric domain switching pathways affects the transient negative capacitance in multidomain PZT ferroelectric capacitor with labyrinthine-like domains having, primarily, 90∘ walls. Using the vector piezoresponse force microscopy, x-ray photoelectron spectroscopy, and energy dispersive x-ray spectroscopy, we show that, together with strain, local variation in composition results in the formation of labyrinthine domains in epitaxial films of thickness ∼1 μm. Clear signature of emergence of bias-voltage-dependent pathways could be observed in the Raman modes exhibiting splitting due to an intermediate state - different from the initial and final states - at the ``intermediate state of switching". The polarization relaxation patterns also show different states emerging depending on the bias voltage characteristics. The phase-field simulation of relaxation of ``intermediate state of switching" corroborates the experimental results and also exhibits dependence of the domain-wall area on the bias voltage and damping parameter. Combining the results of experiments and theoretical calculation, we show, therefore, that the variation of bias voltage leads to a change in the domain switching pathways and each pathway is associated with specific domain-wall area at the ``intermediate state of switching". Since, the net domain-wall area at the ``intermediate state of switching" governs the magnitude of transient negative capacitance, this work thus traces the origin of tunability of transient negative capacitance in PZT ferroelectric capacitor.
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BibTeX
@misc{kumar2026origin,
title = {{Origin of bias-voltage-dependent transient negative capacitance in PZT ferroelectric capacitor with labyrinthine-like domains}},
author = {Ganga S. Kumar and Kusumpal Yadav and Miral Verma and Parushottam Majhi and Pragati Sharma and Kaustuv Chatterjee and Sandip Bysakh and Sudipta Goswami and Prabir Pal and Chandan K. Ghosh and S. B. Roy and Vasant Sathe and Devajyoti Mukherjee and Dipten Bhattacharya},
howpublished = {arXiv},
year = {2026},
month = nov,
doi = {10.48550/arxiv.2611.01697},
eprint = {2611.01697},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2611.01697},
}
RIS
TY - UNPB
TI - Origin of bias-voltage-dependent transient negative capacitance in PZT ferroelectric capacitor with labyrinthine-like domains
AU - Ganga S. Kumar
AU - Kusumpal Yadav
AU - Miral Verma
AU - Parushottam Majhi
AU - Pragati Sharma
AU - Kaustuv Chatterjee
AU - Sandip Bysakh
AU - Sudipta Goswami
AU - Prabir Pal
AU - Chandan K. Ghosh
AU - S. B. Roy
AU - Vasant Sathe
AU - Devajyoti Mukherjee
AU - Dipten Bhattacharya
PY - 2026
DA - 2026/11/01
PB - arXiv
DO - 10.48550/arxiv.2611.01697
UR - https://arxiv.org/abs/2611.01697
AB - We investigated how the bias-voltage-dependent variation in the ferroelectric domain switching pathways affects the transient negative capacitance in multidomain PZT ferroelectric capacitor with labyrinthine-like domains having, primarily, 90^∘ walls. Using the vector piezoresponse force microscopy, x-ray photoelectron spectroscopy, and energy dispersive x-ray spectroscopy, we show that, together with strain, local variation in composition results in the formation of labyrinthine domains in epitaxial films of thickness ∼1 μm. Clear signature of emergence of bias-voltage-dependent pathways could be observed in the Raman modes exhibiting splitting due to an intermediate state - different from the initial and final states - at the ``intermediate state of switching". The polarization relaxation patterns also show different states emerging depending on the bias voltage characteristics. The phase-field simulation of relaxation of ``intermediate state of switching" corroborates the experimental results and also exhibits dependence of the domain-wall area on the bias voltage and damping parameter. Combining the results of experiments and theoretical calculation, we show, therefore, that the variation of bias voltage leads to a change in the domain switching pathways and each pathway is associated with specific domain-wall area at the ``intermediate state of switching". Since, the net domain-wall area at the ``intermediate state of switching" governs the magnitude of transient negative capacitance, this work thus traces the origin of tunability of transient negative capacitance in PZT ferroelectric capacitor.
ER -