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PreprintCC BYChemRxiv

Direct Synthesis of Ag-In-Zn-S Quantum Dot Inks for Solution-Processed Optoelectronics

  • Apostolos Kalafatis1,2
  • Spyros Orfanoudakis1,3
  • Kostas Karaslanidis1
  • Polychronis Tsipas1
  • Alexandros Banis1
  • Thomas Stergiopoulos1
  1. 1Institute of Nanoscience and Nanotechnology , National Centre of Scientific Research "Demokritos", Neapoleos 27 &, Patriarchou Grigoriou E, , Ag. Paraskevi , Attica, Greece, 153 41
  2. 2Department of Chemistry, National and Kapodistrian University of Athens, Panepistimiopolis, Athens, Attica, Greece, 15771
  3. 3Department of Physics, National Technical University of Athens, Politechnioupolis , Athens, Attica, Greece, 15780
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Abstract

Non-toxic I–III–VI quantum dots (QDs) hold strong potential for optoelectronics but are hindered by complex synthesis and post-processing requirements. Here, we demonstrate a direct synthesis of Zn-alloyed AgIn 5 S 8 (AIZS) QDs that produces high-quality inks in N,N-dimethylformamide (DMF). The colloidal stability originates from a synergistic solvation layer comprising surface-bound oxygen-coordinated In/Zn–DMF complexes, co-adsorbed butylamine, and residual iodide anions. The resulting QDs exhibit strong n-type character and photoluminescence quantum yield (PLQY) of ca. 43%. Proof-of-concept Quantum Dot Ligh emitting Diodes (QDLEDs) were fabricated based on this material, demonstrating the feasibility of processing functional emitting layers directly from polar inks.

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Cite

BibTeXRIS
BibTeX
@misc{kalafatis2026direct,
  title = {{Direct Synthesis of Ag-In-Zn-S Quantum Dot Inks for Solution-Processed Optoelectronics}},
  author = {Apostolos Kalafatis and Spyros Orfanoudakis and Kostas Karaslanidis and Polychronis Tsipas and Alexandros Banis and Thomas Stergiopoulos},
  howpublished = {ChemRxiv},
  year = {2026},
  month = sep,
  doi = {10.26434/chemrxiv-2025-r8rx4/v5},
  url = {https://chemrxiv.org/doi/full/10.26434/chemrxiv-2025-r8rx4/v5},
  note = {CC BY},
}
RIS
TY  - UNPB
TI  - Direct Synthesis of Ag-In-Zn-S Quantum Dot Inks for Solution-Processed Optoelectronics
AU  - Apostolos Kalafatis
AU  - Spyros Orfanoudakis
AU  - Kostas Karaslanidis
AU  - Polychronis Tsipas
AU  - Alexandros Banis
AU  - Thomas Stergiopoulos
PY  - 2026
DA  - 2026/09/22
PB  - ChemRxiv
DO  - 10.26434/chemrxiv-2025-r8rx4/v5
UR  - https://chemrxiv.org/doi/full/10.26434/chemrxiv-2025-r8rx4/v5
AB  - Non-toxic I–III–VI quantum dots (QDs) hold strong potential for optoelectronics but are hindered by complex synthesis and post-processing requirements. Here, we demonstrate a direct synthesis of Zn-alloyed AgIn 5 S 8 (AIZS) QDs that produces high-quality inks in N,N-dimethylformamide (DMF). The colloidal stability originates from a synergistic solvation layer comprising surface-bound oxygen-coordinated In/Zn–DMF complexes, co-adsorbed butylamine, and residual iodide anions. The resulting QDs exhibit strong n-type character and photoluminescence quantum yield (PLQY) of ca. 43%. Proof-of-concept Quantum Dot Ligh emitting Diodes (QDLEDs) were fabricated based on this material, demonstrating the feasibility of processing functional emitting layers directly from polar inks.
ER  -