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PreprintCC BY-NC-NDChemRxiv

Growth and crystallization of solution-processed TIPSpentacene on ultra-thin ferroelectric HZO gate dielectrics

  • Towa Nakazawa1
  • Daiji Kitamura1
  • Ryoga Takemoto1
  • Kazuto Koike1
  • Shingo Maruyama2,3
  • Shunsuke Yamamoto4,5
  • Nobuya HIROSHIBA1
5 affiliations
  1. 1Graduate School of Engineering, Nanomaterials Microdevices Research Center, Osaka Institute of Technology, 5-16-1, Omiya, Asahi-ku, Osaka, Japan, 535-8585
  2. 2Department of Electronics and Materials Science
  3. 3Shizuoka University
  4. 4Graduate School of Engineering
  5. 5Kyoto University
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Abstract

The solution processed organic thin film growth on the ferroelectric Hf0.5Zr0.5O2(HZO) thin films was investigated using the most commonly used TIPS-pentacene toward memory device applications. The molecular orientations, surface morphologies, and crystallinity of TIPS pentacene deposited on HZO were comparable to those of fabricated thin films on SiO2. In particular, 2D-GIXD results showed that TIPS-pentacene on HZO crystallized by annealing at 150°C exhibited higher crystallinity and molecular orientation than that on SiO2. Preliminary electrical measurements revealed that TIPS‑pentacene/HZO stacks exhibited strong channel conduction with negligible gate modulation, indicating that interfacial electronic states at the HZO surface dominate charge transport.

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Cite

BibTeXRIS
BibTeX
@misc{nakazawa2026growth,
  title = {{Growth and crystallization of solution-processed TIPSpentacene on ultra-thin ferroelectric HZO gate dielectrics}},
  author = {Towa Nakazawa and Daiji Kitamura and Ryoga Takemoto and Kazuto Koike and Shingo Maruyama and Shunsuke Yamamoto and Nobuya HIROSHIBA},
  howpublished = {ChemRxiv},
  year = {2026},
  month = oct,
  doi = {10.26434/chemrxiv.15009945/v1},
  url = {https://chemrxiv.org/doi/full/10.26434/chemrxiv.15009945/v1},
  note = {CC BY-NC-ND},
}
RIS
TY  - UNPB
TI  - Growth and crystallization of solution-processed TIPSpentacene on ultra-thin ferroelectric HZO gate dielectrics
AU  - Towa Nakazawa
AU  - Daiji Kitamura
AU  - Ryoga Takemoto
AU  - Kazuto Koike
AU  - Shingo Maruyama
AU  - Shunsuke Yamamoto
AU  - Nobuya HIROSHIBA
PY  - 2026
DA  - 2026/10/05
PB  - ChemRxiv
DO  - 10.26434/chemrxiv.15009945/v1
UR  - https://chemrxiv.org/doi/full/10.26434/chemrxiv.15009945/v1
AB  - The solution processed organic thin film growth on the ferroelectric Hf0.5Zr0.5O2(HZO) thin films was investigated using the most commonly used TIPS-pentacene toward memory device applications. The molecular orientations, surface morphologies, and crystallinity of TIPS pentacene deposited on HZO were comparable to those of fabricated thin films on SiO2. In particular, 2D-GIXD results showed that TIPS-pentacene on HZO crystallized by annealing at 150°C exhibited higher crystallinity and molecular orientation than that on SiO2. Preliminary electrical measurements revealed that TIPS‑pentacene/HZO stacks exhibited strong channel conduction with negligible gate modulation, indicating that interfacial electronic states at the HZO surface dominate charge transport.
ER  -