Symmetry-engineered and electrically tunable in-plane anomalous Hall effect in oxide heterostructures
Abstract
The anomalous Hall effect has long served as a cornerstone for uncovering low-dissipation quantum phenomena and powering Hall-based functionalities, yet its tunability and device application are constrained by the orthogonal relationship among electric field, Hall current, and out-of-plane magnetization in thin-film geometry. The recently emerged in-plane anomalous Hall effect, a transverse Hall response driven by in-plane magnetization, promises to unlock Hall readout of planar magnetic orders and spin textures. However, in sharp contrast to the conventional anomalous Hall effect, experimentally accessible and effective control strategies for the in-plane anomalous Hall effect remain largely undeveloped, impeding its transition from phenomenological observation to device implementation. Here we establish a symmetry-engineered, electrically tunable in-plane anomalous Hall effect in epitaxial CaRuO₃/La2/3Ca1/3MnO₃/CaRuO₃ heterostructures grown on NdGaO₃(110). By exploiting CaRuO₃-buffer-controlled mirror-symmetry breaking in the ferromagnetic La2/3Ca1/3MnO₃ layer, we achieve a robust in-plane anomalous Hall effect that faithfully mirrors square-shaped ferromagnetic hysteresis, providing a direct Hall readout of in-plane magnetization reversal. Ionic liquid gating further enables dynamic reconfiguration of the symmetry breaking, achieving wide-range electrical modulation and fully reversible ON/OFF switching of the in-plane anomalous Hall effect. This highly tunable platform offers a symmetry-based probe of emergent low-dimensional magnetism and facilitates the development of programmable Hall functionalities in planar device geometries.
Related
- Symmetry-Engineered Multiple Bulk-Boundary Correspondences and Anomalous Modes in a Non-Hermitian Creutz Ladder
- Magnetically and electrically tunable nonlinear Hall effect in Tt-symmetric antiferromagnets
- Electrically tunable superconducting dimensionality in stripe-ordered monolayer MoTe2
- Electrically reconfigurable dipolar polaritons with highly tunable nonlinearity in a homobilayer microcavity
- Electrically Tunable Two-Component Exciton Condensate in a Coulomb-Coupled Graphene Trilayer
BibTeX
@article{dai2026symmetryengineered,
title = {{Symmetry-engineered and electrically tunable in-plane anomalous Hall effect in oxide heterostructures}},
author = {Kunjie Dai and Zhen Wang and Wenfeng Wu and Feng Jin and Enda Hua and Nan Liu and Jingdi Lu and Jinfeng Zhang and Yuyue Zhao and Linda Yang and Kai Liu and Huan Ye and Qiming Lv and Zhengguo Liang and Ao Wang and Shengchun Shen and Dazhi Hou and Yang Gao and Jing Tao and Liang Si and Wenbin Wu and Lingfei Wang},
journal = {Nature Communications},
year = {2026},
month = oct,
doi = {10.1038/s41467-026-78350-x},
url = {https://www.nature.com/articles/s41467-026-78350-x},
note = {CC BY-NC-ND 4.0},
}
RIS
TY - JOUR
TI - Symmetry-engineered and electrically tunable in-plane anomalous Hall effect in oxide heterostructures
AU - Kunjie Dai
AU - Zhen Wang
AU - Wenfeng Wu
AU - Feng Jin
AU - Enda Hua
AU - Nan Liu
AU - Jingdi Lu
AU - Jinfeng Zhang
AU - Yuyue Zhao
AU - Linda Yang
AU - Kai Liu
AU - Huan Ye
AU - Qiming Lv
AU - Zhengguo Liang
AU - Ao Wang
AU - Shengchun Shen
AU - Dazhi Hou
AU - Yang Gao
AU - Jing Tao
AU - Liang Si
AU - Wenbin Wu
AU - Lingfei Wang
PY - 2026
DA - 2026/10/06
JO - Nature Communications
DO - 10.1038/s41467-026-78350-x
UR - https://www.nature.com/articles/s41467-026-78350-x
AB - The anomalous Hall effect has long served as a cornerstone for uncovering low-dissipation quantum phenomena and powering Hall-based functionalities, yet its tunability and device application are constrained by the orthogonal relationship among electric field, Hall current, and out-of-plane magnetization in thin-film geometry. The recently emerged in-plane anomalous Hall effect, a transverse Hall response driven by in-plane magnetization, promises to unlock Hall readout of planar magnetic orders and spin textures. However, in sharp contrast to the conventional anomalous Hall effect, experimentally accessible and effective control strategies for the in-plane anomalous Hall effect remain largely undeveloped, impeding its transition from phenomenological observation to device implementation. Here we establish a symmetry-engineered, electrically tunable in-plane anomalous Hall effect in epitaxial CaRuO₃/La2/3Ca1/3MnO₃/CaRuO₃ heterostructures grown on NdGaO₃(110). By exploiting CaRuO₃-buffer-controlled mirror-symmetry breaking in the ferromagnetic La2/3Ca1/3MnO₃ layer, we achieve a robust in-plane anomalous Hall effect that faithfully mirrors square-shaped ferromagnetic hysteresis, providing a direct Hall readout of in-plane magnetization reversal. Ionic liquid gating further enables dynamic reconfiguration of the symmetry breaking, achieving wide-range electrical modulation and fully reversible ON/OFF switching of the in-plane anomalous Hall effect. This highly tunable platform offers a symmetry-based probe of emergent low-dimensional magnetism and facilitates the development of programmable Hall functionalities in planar device geometries.
SN - 2041-1723
ER -