Quantitative Fabrication-Error Reduction in Optomechanical Crystal using Proximity Error Correction
Abstract
We demonstrate the use of proximity effect correction (PEC) in electron beam lithography (EBL) to improve the fabrication fidelity of dense photonic crystal structures. Monte Carlo simulations were employed to model electron scattering and determine the proximity function of the resist-substrate system. Based on this, a computational dose-modification scheme was implemented to compensate for nonuniform energy deposition during exposure. In addition, SEM-based image analysis was performed to quantitatively assess structural differences among uniformly exposed, manually dose-modified, and PEC-fabricated devices by comparing extracted geometries with the reference GDS design. The analysis revealed reduced dimensional deviation, improved spatial uniformity, and lower edge roughness in the PEC-corrected structures. These improvements resulted in a significantly enhanced optical quality factor in the fabricated photonic crystal cavities.
Related
- Plasmonic Lithography Optical Proximity Correction Method Based on Decomposed Machine Learning Fast Imaging Model
- Blank Spectrum Correction as a Robust Solution to Artifacts in Quantitative X-ray Fluorescence Mapping.
- Sam-Correction: Fully Adaptive Label Noise Reduction for Medical Image Segmentation
- Quantitative interpretation of Brookfield DV3TLV measurements: shear rate conversion, correction factors, and applicability limits
- A Universal Scaling Approach for Transferring Optomechanical and One-Dimensional Photonic Crystal Designs Across Material Platforms
BibTeX
@misc{ghosh2026quantitative,
title = {{Quantitative Fabrication-Error Reduction in Optomechanical Crystal using Proximity Error Correction}},
author = {Pratip Ghosh and Anohita Mallick and Akshay K. Naik},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.10741},
eprint = {2609.10741},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.10741},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Quantitative Fabrication-Error Reduction in Optomechanical Crystal using Proximity Error Correction
AU - Pratip Ghosh
AU - Anohita Mallick
AU - Akshay K. Naik
PY - 2026
DA - 2026/09/09
PB - arXiv
DO - 10.48550/arxiv.2609.10741
UR - https://arxiv.org/abs/2609.10741
AB - We demonstrate the use of proximity effect correction (PEC) in electron beam lithography (EBL) to improve the fabrication fidelity of dense photonic crystal structures. Monte Carlo simulations were employed to model electron scattering and determine the proximity function of the resist-substrate system. Based on this, a computational dose-modification scheme was implemented to compensate for nonuniform energy deposition during exposure. In addition, SEM-based image analysis was performed to quantitatively assess structural differences among uniformly exposed, manually dose-modified, and PEC-fabricated devices by comparing extracted geometries with the reference GDS design. The analysis revealed reduced dimensional deviation, improved spatial uniformity, and lower edge roughness in the PEC-corrected structures. These improvements resulted in a significantly enhanced optical quality factor in the fabricated photonic crystal cavities.
ER -