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Demonstration of high output power (3.75 W/mm) with 31.8% PAE in Ga-Polar AlGaN/GaN HEMTs on sapphire at 94 GHz
Abstract
In this work, a recessed-gate Ga-polar AlGaN/GaN high-electron-mobility transistor (HEMT) on sapphire incorporating an AlGaN back-barrier for W-band operation is demonstrated. The device achieves a subthreshold slope of ~130 mV/dec, a peak transconductance of 0.75 S/mm, and an fmax exceeding 240 GHz. Continuous-wave load-pull measurements at 94 GHz show an output power of 3.75 W/mm with a power-added efficiency of 31.8%. This performance significantly exceeds the best previously reported Ga-polar devices on sapphire and approaches that of state-of-the-art Ga-polar devices on SiC, which provides a promising pathway toward high-performance W-band devices.
Versions
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BibTeX
@misc{bai2026demonstration,
title = {{Demonstration of high output power (3.75 W/mm) with 31.8% PAE in Ga-Polar AlGaN/GaN HEMTs on sapphire at 94 GHz}},
author = {Ruixin Bai and Swarnav Mukhopadhyay and Michael Elliott and Ryan Gilbert and Surjava Sanyal and Darryl Shima and Jiahao Chen and Rafael A. Choudhury and Kyudong Kim and Yu-Chun Wang and Ganesh Balakrishnan and Ahmad E. Islam and Andrew J. Green and Shubhra S. Pasayat and Chirag Gupta},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.36492},
eprint = {2610.36492},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.36492},
}
RIS
TY - UNPB
TI - Demonstration of high output power (3.75 W/mm) with 31.8% PAE in Ga-Polar AlGaN/GaN HEMTs on sapphire at 94 GHz
AU - Ruixin Bai
AU - Swarnav Mukhopadhyay
AU - Michael Elliott
AU - Ryan Gilbert
AU - Surjava Sanyal
AU - Darryl Shima
AU - Jiahao Chen
AU - Rafael A. Choudhury
AU - Kyudong Kim
AU - Yu-Chun Wang
AU - Ganesh Balakrishnan
AU - Ahmad E. Islam
AU - Andrew J. Green
AU - Shubhra S. Pasayat
AU - Chirag Gupta
PY - 2026
DA - 2026/10/27
PB - arXiv
DO - 10.48550/arxiv.2610.36492
UR - https://arxiv.org/abs/2610.36492
AB - In this work, a recessed-gate Ga-polar AlGaN/GaN high-electron-mobility transistor (HEMT) on sapphire incorporating an AlGaN back-barrier for W-band operation is demonstrated. The device achieves a subthreshold slope of ~130 mV/dec, a peak transconductance of 0.75 S/mm, and an fmax exceeding 240 GHz. Continuous-wave load-pull measurements at 94 GHz show an output power of 3.75 W/mm with a power-added efficiency of 31.8%. This performance significantly exceeds the best previously reported Ga-polar devices on sapphire and approaches that of state-of-the-art Ga-polar devices on SiC, which provides a promising pathway toward high-performance W-band devices.
ER -