Assessment of AlGaN channel high-electron mobility transistors on silicon for high-temperature power electronics
Abstract
Wide and ultrawide bandgap semiconductors present novel opportunities for advancing power electronics, particularly in domains where high-voltage operation and elevated temperature stability are required. In this context, AlGaN/AlGaN heterostructures emerge as promising candidates due to their better intrinsic material properties compared to AlGaN/GaN heterostructures. Furthermore, the tunability of the aluminum molar fraction within AlGaN provides more possibilities for semiconductor engineering. This investigation focuses on evaluating the temperature operation of AlGaN channel high-electron mobility transistors grown on silicon substrates with different aluminum contents. The objective is to assess the thermal reliability of these devices for high-temperature power applications. The results highlight the low off-state current density, a more abrupt subthreshold slope, and a reduction in the temperature-induced decrease in on-state current density in Al-rich AlGaN channel high-electron mobility transistors grown on silicon substrates, positioning them as a promising solution for high-temperature power electronics.
Related
- A thermometric quantum Brownian model for low-temperature electronics
- Reducing the Gate-Induced Drain-Leakage Current of Carbon-Nanotube Transistors by Subliming Dispersants with Back-End-of-Line Compatible Temperature
- Face-to-face anneal temperature controls lattice parameter in Ta(C,N) virtual substrates for AlGaN power electronics
- Measurement of the free ion yield and estimate of the electron mobility of Trimethyl-Bismuth (TMBi)
- Extending the operating window of scanning electron microscopy through an integrated electron-optical architecture for high-temperature and near-ambient-pressure environments
BibTeX
@article{bassaler2026assessment,
title = {{Assessment of AlGaN channel high-electron mobility transistors on silicon for high-temperature power electronics}},
author = {Julien Bassaler and Jash Mehta and Stéphanie Rennesson and Fabrice Semond and Sylvie Contreras and Julien Pernot and Yvon Cordier and Farid Medjdoub and Philippe Ferrandis},
journal = {Applied Physics Letters},
year = {2026},
month = aug,
doi = {10.1063/5.0326014},
url = {https://hal.science/hal-05742914v1},
note = {CC BY 4.0},
}
RIS
TY - JOUR
TI - Assessment of AlGaN channel high-electron mobility transistors on silicon for high-temperature power electronics
AU - Julien Bassaler
AU - Jash Mehta
AU - Stéphanie Rennesson
AU - Fabrice Semond
AU - Sylvie Contreras
AU - Julien Pernot
AU - Yvon Cordier
AU - Farid Medjdoub
AU - Philippe Ferrandis
PY - 2026
DA - 2026/08/27
JO - Applied Physics Letters
DO - 10.1063/5.0326014
UR - https://hal.science/hal-05742914v1
AB - Wide and ultrawide bandgap semiconductors present novel opportunities for advancing power electronics, particularly in domains where high-voltage operation and elevated temperature stability are required. In this context, AlGaN/AlGaN heterostructures emerge as promising candidates due to their better intrinsic material properties compared to AlGaN/GaN heterostructures. Furthermore, the tunability of the aluminum molar fraction within AlGaN provides more possibilities for semiconductor engineering. This investigation focuses on evaluating the temperature operation of AlGaN channel high-electron mobility transistors grown on silicon substrates with different aluminum contents. The objective is to assess the thermal reliability of these devices for high-temperature power applications. The results highlight the low off-state current density, a more abrupt subthreshold slope, and a reduction in the temperature-induced decrease in on-state current density in Al-rich AlGaN channel high-electron mobility transistors grown on silicon substrates, positioning them as a promising solution for high-temperature power electronics.
SN - 0003-6951
SN - 1077-3118
ER -