A self-compliant selector-free memory with functional bismuth ferrite
Abstract
In-memory computing requires selector-free operation, low variability, and stable multilevel switching, all of which remain challenging to achieve in a single system. Here, we demonstrate a robust selector-free memory based on a multiferroic BiFeO3 that combines self-compliance with stable bipolar switching, high yield, long endurance, and extended retention. We observe that BiFeO3 memristive crossbar arrays become self-compliant through a naturally formed TiOx interfacial layer, enabling forming-free bipolar switching without external selector devices, addressing major bottlenecks that have limited the practical deployment of resistive memories. The array delivers stable bipolar switching with a 97% device yield, endurance beyond 105 cycles, and data retention exceeding 105 s with low cycle-to-cycle and device-to-device variability. In addition, the devices exhibit 16 well-separated conductance states, enabling 4-bit multilevel operation via precise pulse-controlled programming for digit visualization in edge applications. Noise measurements reveal predominantly 1/f-type behavior with minimal random telegraph noise, indicating robust conductance stability across the programmable window. These results establish BiFeO3 as a practical materials platform for multibit, selector-free crossbar memories offering high reliability, making it well-suited for scalable computing architectures based on functional materials.
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BibTeX
@misc{roy2026selfcompliant,
title = {{A self-compliant selector-free memory with functional bismuth ferrite}},
author = {Suman Roy and Subhabrata Das and Priyanka Sahu and Majid Ahmadi and Sameer Kumar Mallik and Kaushik Ghosh and Saroj Prasad Dash and Satyaprakash Sahoo},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.15732},
eprint = {2609.15732},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.15732},
}
RIS
TY - UNPB
TI - A self-compliant selector-free memory with functional bismuth ferrite
AU - Suman Roy
AU - Subhabrata Das
AU - Priyanka Sahu
AU - Majid Ahmadi
AU - Sameer Kumar Mallik
AU - Kaushik Ghosh
AU - Saroj Prasad Dash
AU - Satyaprakash Sahoo
PY - 2026
DA - 2026/09/14
PB - arXiv
DO - 10.48550/arxiv.2609.15732
UR - https://arxiv.org/abs/2609.15732
AB - In-memory computing requires selector-free operation, low variability, and stable multilevel switching, all of which remain challenging to achieve in a single system. Here, we demonstrate a robust selector-free memory based on a multiferroic BiFeO3 that combines self-compliance with stable bipolar switching, high yield, long endurance, and extended retention. We observe that BiFeO3 memristive crossbar arrays become self-compliant through a naturally formed TiOx interfacial layer, enabling forming-free bipolar switching without external selector devices, addressing major bottlenecks that have limited the practical deployment of resistive memories. The array delivers stable bipolar switching with a 97% device yield, endurance beyond 105 cycles, and data retention exceeding 105 s with low cycle-to-cycle and device-to-device variability. In addition, the devices exhibit 16 well-separated conductance states, enabling 4-bit multilevel operation via precise pulse-controlled programming for digit visualization in edge applications. Noise measurements reveal predominantly 1/f-type behavior with minimal random telegraph noise, indicating robust conductance stability across the programmable window. These results establish BiFeO3 as a practical materials platform for multibit, selector-free crossbar memories offering high reliability, making it well-suited for scalable computing architectures based on functional materials.
ER -