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PreprintarXiv licencearXiv

THz-Driven Floquet Spin Valve-Modulator

Abstract

Within the scattering matrix (S-matrix) framework adapted to the high-frequency Floquet--Magnus formalism based on the length gauge, we investigate spin-dependent quantum transport in a 1D quantum ring with an asymmetric (π/2) configuration of quantum point contacts. We demonstrate the realization of a contactless electromagnetic analog of the Datta--Das spin field-effect transistor with ferromagnetic leads operating at zero static magnetic field. It is shown that an off-resonance terahertz (THz) field enables high-precision switching between spin channels without altering the static parameters of the nanostructure. Driven by an electronic Vernier effect, the quantum interference in the asymmetric geometry yields a selective spin phase rotator alongside an ultra-high-contrast current-suppression regime (``optical shutter''). The proposed architecture is fundamentally robust against multiphoton leakage sidebands, offering a thermally immune, high-speed alternative to conventional semiconductor static spin transistors.

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BibTeX
@misc{nazmitdinov2026thzdriven,
  title = {{THz-Driven Floquet Spin Valve-Modulator}},
  author = {R. G. Nazmitdinov},
  howpublished = {arXiv},
  year = {2026},
  month = oct,
  doi = {10.48550/arxiv.2607.19897},
  eprint = {2607.19897},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2607.19897},
}
RIS
TY  - UNPB
TI  - THz-Driven Floquet Spin Valve-Modulator
AU  - R. G. Nazmitdinov
PY  - 2026
DA  - 2026/10/26
PB  - arXiv
DO  - 10.48550/arxiv.2607.19897
UR  - https://arxiv.org/abs/2607.19897
AB  - Within the scattering matrix (S-matrix) framework adapted to the high-frequency Floquet--Magnus formalism based on the length gauge, we investigate spin-dependent quantum transport in a 1D quantum ring with an asymmetric (π/2) configuration of quantum point contacts. We demonstrate the realization of a contactless electromagnetic analog of the Datta--Das spin field-effect transistor with ferromagnetic leads operating at zero static magnetic field. It is shown that an off-resonance terahertz (THz) field enables high-precision switching between spin channels without altering the static parameters of the nanostructure. Driven by an electronic Vernier effect, the quantum interference in the asymmetric geometry yields a selective spin phase rotator alongside an ultra-high-contrast current-suppression regime (``optical shutter''). The proposed architecture is fundamentally robust against multiphoton leakage sidebands, offering a thermally immune, high-speed alternative to conventional semiconductor static spin transistors.
ER  -