Identifying Plastic Inorganic Semiconductors Requires More Rigorous Criteria
Abstract
The identification of plastic inorganic semiconductors becomes challenging when their mechanical responses depend on crystallographic orientation, sample size, and loading conditions. Using layered GeSe as a model system, we examine its deformation behavior through macroscopic compression, bending, conventional micropillar compression, and eccentric micropillar compression. Under macroscopic compression perpendicular to the layers, GeSe sustains approximately 23% strain without fracture, whereas bending along the c-axis armchair direction produces brittle cleavage fracture. Conventional micropillar compression results in brittle fragmentation, while eccentric loading introduces a shear component that activates pronounced interlayer sliding and accommodates deformation. These contrasting responses reflect the coupled effects of bonding topology, interlayer van der Waals interactions, defect density, stress constraints, and strain path on the competition between sliding and fracture. The results highlight the limitations of identifying plasticity from a single direction, scale, or test and support a systematic evaluation framework combining multiple directions, length scales, loading modes, and characterization techniques. More rigorous and unified criteria are needed to guide reliable materials selection for flexible electronics and devices integrated on curved surfaces.
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BibTeX
@misc{wang2026identifying,
title = {{Identifying Plastic Inorganic Semiconductors Requires More Rigorous Criteria}},
author = {Qiao Wang},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.07007},
eprint = {2610.07007},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.07007},
}
RIS
TY - UNPB
TI - Identifying Plastic Inorganic Semiconductors Requires More Rigorous Criteria
AU - Qiao Wang
PY - 2026
DA - 2026/10/04
PB - arXiv
DO - 10.48550/arxiv.2610.07007
UR - https://arxiv.org/abs/2610.07007
AB - The identification of plastic inorganic semiconductors becomes challenging when their mechanical responses depend on crystallographic orientation, sample size, and loading conditions. Using layered GeSe as a model system, we examine its deformation behavior through macroscopic compression, bending, conventional micropillar compression, and eccentric micropillar compression. Under macroscopic compression perpendicular to the layers, GeSe sustains approximately 23% strain without fracture, whereas bending along the c-axis armchair direction produces brittle cleavage fracture. Conventional micropillar compression results in brittle fragmentation, while eccentric loading introduces a shear component that activates pronounced interlayer sliding and accommodates deformation. These contrasting responses reflect the coupled effects of bonding topology, interlayer van der Waals interactions, defect density, stress constraints, and strain path on the competition between sliding and fracture. The results highlight the limitations of identifying plasticity from a single direction, scale, or test and support a systematic evaluation framework combining multiple directions, length scales, loading modes, and characterization techniques. More rigorous and unified criteria are needed to guide reliable materials selection for flexible electronics and devices integrated on curved surfaces.
ER -