Interlayer coupling between twisted graphenes through atomically-precise barriers
Abstract
Understanding and controlling interlayer coupling in van der Waals (vdW) materials is crucial for engineering novel electronic phenomena, including correlated states, topological phases, and superconductivity. Twisted bilayer graphene (TBG) offers a highly tunable platform to explore how interlayer orientation and separation influence quantum transport and moiré physics. Here, we introduce a method for achieving precise, atomic-scale control of interlayer coupling in TBG using dual-gated devices separated by ultrathin, thickness-tunable hBN spacers. This approach enables systematic control of interlayer interactions, demonstrating that the critical displacement field required for electron-hole bilayer behavior decreases as the layer separation increases at a fixed twist angle. Remarkably, at small twist angles, moiré-related side peaks persist even when layers are separated by tetralayers of hBN (approximately 1.3 nm), indicating robust interlayer band hybridization. By combining atomic-layer-precise control of interlayer coupling with independent twist angle tunability, our platform opens new avenues for discovering novel moiré physics governed by engineered interlayer coupling and moiré patterns.
Related
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BibTeX
@misc{wang2026interlayer,
title = {{Interlayer coupling between twisted graphenes through atomically-precise barriers}},
author = {Yueyang Wang and Ben Fuller and Hongxia Xue and Tianyu Zhang and Kenji Watanabe and Takashi Taniguchi and Vladimir Fal'ko and Dong-Keun Ki},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2609.36703},
eprint = {2609.36703},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.36703},
}
RIS
TY - UNPB
TI - Interlayer coupling between twisted graphenes through atomically-precise barriers
AU - Yueyang Wang
AU - Ben Fuller
AU - Hongxia Xue
AU - Tianyu Zhang
AU - Kenji Watanabe
AU - Takashi Taniguchi
AU - Vladimir Fal'ko
AU - Dong-Keun Ki
PY - 2026
DA - 2026/10/13
PB - arXiv
DO - 10.48550/arxiv.2609.36703
UR - https://arxiv.org/abs/2609.36703
AB - Understanding and controlling interlayer coupling in van der Waals (vdW) materials is crucial for engineering novel electronic phenomena, including correlated states, topological phases, and superconductivity. Twisted bilayer graphene (TBG) offers a highly tunable platform to explore how interlayer orientation and separation influence quantum transport and moiré physics. Here, we introduce a method for achieving precise, atomic-scale control of interlayer coupling in TBG using dual-gated devices separated by ultrathin, thickness-tunable hBN spacers. This approach enables systematic control of interlayer interactions, demonstrating that the critical displacement field required for electron-hole bilayer behavior decreases as the layer separation increases at a fixed twist angle. Remarkably, at small twist angles, moiré-related side peaks persist even when layers are separated by tetralayers of hBN (approximately 1.3 nm), indicating robust interlayer band hybridization. By combining atomic-layer-precise control of interlayer coupling with independent twist angle tunability, our platform opens new avenues for discovering novel moiré physics governed by engineered interlayer coupling and moiré patterns.
ER -