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PreprintarXiv licencearXiv

Complete Au-free Metallization Platform for UWBG Al0.65Ga0.35N channel MOS-HEMTs using Ti/Al/Ti Ohmic Contacts and Refractory TiN/Pt Gates

  • Mafruda Rahman
  • Dharun Manoharan
  • Tariq Jamil
  • Abdullah Al Mamun Mazumder
  • Muhammad Ali
  • Anthony Joyce
  • Chandan Joishi
  • James G. Fiorenza
  • Manoj Kumar Chandra Mohan
  • Grigory Simin
  • Asif Khan
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Abstract

Au-free ohmic contacts and refractory gate stacks are critical for integrating ultra-wide-bandgap (UWBG) Al-rich AlGaN transistors with Si-CMOS technology. In this work, we demonstrate, to our knowledge, the first complete Au-free metallization platform for Al0.65Ga0.35N-channel MOS-HEMTs, combining electron-beam-evaporated and sputtered Ti/Al/Ti ohmic contacts with sputtered TiN and Pt gate metals. The Ti/Al/Ti contacts achieved a contact resistance of approximately 7.5--7.7 Ω·mm while being fully Au-free. This contact resistance is achieved using a 600 ∘C anneal, substantially below the 850--950 ∘C typically required for Au-capped Ti/Al/X/Au contacts on Al-rich AlGaN, indicating a reduced thermal budget and improved compatibility with silicon-CMOS foundries. TiN gates deliver drain-current density up to 450 mA/mm at Vth = −13 V, whereas Pt gates shift Vth to -2.5 V with a reduced current drive of 220 mA/mm, reflecting the effects of gate work function. TiN-gated devices exhibit lower current degradation under pulsed operation and a higher critical breakdown field (Ec ≈ 3.5 MV/cm) than Pt-gated devices (Ec ≈ 2.98 MV/cm), measured without field plating at LGD = 2.3 μm. Collectively, these results establish a low-thermal-budget, fully Au-free, CMOS-compatible metallization platform for high-performance Al-rich AlGaN UWBG power electronics.

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Cite

BibTeXRIS
BibTeX
@misc{rahman2026complete,
  title = {{Complete Au-free Metallization Platform for UWBG Al$_0.65$Ga$_0.35$N channel MOS-HEMTs using Ti/Al/Ti Ohmic Contacts and Refractory TiN/Pt Gates}},
  author = {Mafruda Rahman and Dharun Manoharan and Tariq Jamil and Abdullah Al Mamun Mazumder and Muhammad Ali and Anthony Joyce and Chandan Joishi and James G. Fiorenza and Manoj Kumar Chandra Mohan and Grigory Simin and Asif Khan},
  howpublished = {arXiv},
  year = {2026},
  month = oct,
  doi = {10.48550/arxiv.2610.40993},
  eprint = {2610.40993},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2610.40993},
}
RIS
TY  - UNPB
TI  - Complete Au-free Metallization Platform for UWBG Al_0.65Ga_0.35N channel MOS-HEMTs using Ti/Al/Ti Ohmic Contacts and Refractory TiN/Pt Gates
AU  - Mafruda Rahman
AU  - Dharun Manoharan
AU  - Tariq Jamil
AU  - Abdullah Al Mamun Mazumder
AU  - Muhammad Ali
AU  - Anthony Joyce
AU  - Chandan Joishi
AU  - James G. Fiorenza
AU  - Manoj Kumar Chandra Mohan
AU  - Grigory Simin
AU  - Asif Khan
PY  - 2026
DA  - 2026/10/29
PB  - arXiv
DO  - 10.48550/arxiv.2610.40993
UR  - https://arxiv.org/abs/2610.40993
AB  - Au-free ohmic contacts and refractory gate stacks are critical for integrating ultra-wide-bandgap (UWBG) Al-rich AlGaN transistors with Si-CMOS technology. In this work, we demonstrate, to our knowledge, the first complete Au-free metallization platform for Al_0.65Ga_0.35N-channel MOS-HEMTs, combining electron-beam-evaporated and sputtered Ti/Al/Ti ohmic contacts with sputtered TiN and Pt gate metals. The Ti/Al/Ti contacts achieved a contact resistance of approximately 7.5--7.7 Ω·mm while being fully Au-free. This contact resistance is achieved using a 600 ^∘C anneal, substantially below the 850--950 ^∘C typically required for Au-capped Ti/Al/X/Au contacts on Al-rich AlGaN, indicating a reduced thermal budget and improved compatibility with silicon-CMOS foundries. TiN gates deliver drain-current density up to 450 mA/mm at V_th = −13 V, whereas Pt gates shift V_th to -2.5 V with a reduced current drive of 220 mA/mm, reflecting the effects of gate work function. TiN-gated devices exhibit lower current degradation under pulsed operation and a higher critical breakdown field (E_c ≈ 3.5 MV/cm) than Pt-gated devices (E_c ≈ 2.98 MV/cm), measured without field plating at L_GD = 2.3 μm. Collectively, these results establish a low-thermal-budget, fully Au-free, CMOS-compatible metallization platform for high-performance Al-rich AlGaN UWBG power electronics.
ER  -