Tuning the Coercive Field in Ferroelectric Hf0.5Zr0.5O2-Al2O3 Heterostructures via Interfacial Charge Dynamics

Abstract

Interleaving dielectric layers into ferroelectric Hf0.5Zr0.5O2 (HZO) films increases the memory window (MW) beyond what is accounted for by the dielectric constants. Determining the physical mechanisms behind these MW improvements is critical to reaching the full potential of HZO FeNAND. Here, we show that MW improvements stem from the interfacial charge dynamics enabled by oxygen vacancies at the interlayer interface. X-ray photoelectron spectroscopy(XPS) etching experiments demonstrate increased off-stoichiometry at the interface, with a 2.3x increase in oxygen vacancies. Polarization-dependent XPS and first-order reversal curves(FORC) show that tunneling between interfacial defect states causes a bidirectional internal bias of 0.56MV/cm. The impact of defects is further corroborated through phase-field modeling(PFM), which only recreates the coercive fields, FORC, and internal bias for defect densities and tunneling barrier heights that are consistent with experiment, quantitatively capturing an internal electric field of 0.55 MV/cm. The phase field models are then used to simulate 36 devices with varied charge densities and dielectric thickness to provide a predictive framework for further improvements in the MW of interlayer HZO. These findings redefine the role of defects in ferroelectric HZO from deleterious to engineerable and provide critical insights into how to tune ferroelectric device architectures for improved memory.

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Cite

BibTeX RIS

BibTeX

@misc{frye2026tuning,
  title = {{Tuning the Coercive Field in Ferroelectric Hf0.5Zr0.5O2-Al2O3 Heterostructures via Interfacial Charge Dynamics}},
  author = {Marshall B. Frye and Chanyoung Kim and Jeong-Woo Sun and John Wellington-Johnson and Lance Fernandes and Prasanna Venkatesan Ravindran and Bogdan Dryzhakov and TaeYoung Song and Mengkun Tian and Asif I. Khan and Lauren M. Garten},
  howpublished = {arXiv},
  year = {2026},
  month = sep,
  doi = {10.48550/arxiv.2609.20482},
  eprint = {2609.20482},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2609.20482},
  note = {CC BY 4.0},
}

RIS

TY  - UNPB
TI  - Tuning the Coercive Field in Ferroelectric Hf0.5Zr0.5O2-Al2O3 Heterostructures via Interfacial Charge Dynamics
AU  - Marshall B. Frye
AU  - Chanyoung Kim
AU  - Jeong-Woo Sun
AU  - John Wellington-Johnson
AU  - Lance Fernandes
AU  - Prasanna Venkatesan Ravindran
AU  - Bogdan Dryzhakov
AU  - TaeYoung Song
AU  - Mengkun Tian
AU  - Asif I. Khan
AU  - Lauren M. Garten
PY  - 2026
DA  - 2026/09/17
PB  - arXiv
DO  - 10.48550/arxiv.2609.20482
UR  - https://arxiv.org/abs/2609.20482
AB  - Interleaving dielectric layers into ferroelectric Hf0.5Zr0.5O2 (HZO) films increases the memory window (MW) beyond what is accounted for by the dielectric constants. Determining the physical mechanisms behind these MW improvements is critical to reaching the full potential of HZO FeNAND. Here, we show that MW improvements stem from the interfacial charge dynamics enabled by oxygen vacancies at the interlayer interface. X-ray photoelectron spectroscopy(XPS) etching experiments demonstrate increased off-stoichiometry at the interface, with a 2.3x increase in oxygen vacancies. Polarization-dependent XPS and first-order reversal curves(FORC) show that tunneling between interfacial defect states causes a bidirectional internal bias of 0.56MV/cm. The impact of defects is further corroborated through phase-field modeling(PFM), which only recreates the coercive fields, FORC, and internal bias for defect densities and tunneling barrier heights that are consistent with experiment, quantitatively capturing an internal electric field of 0.55 MV/cm. The phase field models are then used to simulate 36 devices with varied charge densities and dielectric thickness to provide a predictive framework for further improvements in the MW of interlayer HZO. These findings redefine the role of defects in ferroelectric HZO from deleterious to engineerable and provide critical insights into how to tune ferroelectric device architectures for improved memory.
ER  -

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