Electric Edelstein Effect in Two Dimensions
Abstract
We propose the electric Edelstein effect (EEE) in two-dimensional (2D) systems, where crossed out-of-plane and in-plane electric fields generate a spin polarization. The gate field converts the Edelstein response from a material-fixed spin polarization into a gate-tunable one. A symmetry analysis over all magnetic layer point groups shows that the EEE is allowed in a wide range of magnetic and nonmagnetic systems, including ferromagnets, antiferromagnets, and altermagnets. The EEE plays two distinct roles: it generates spin polarization where the linear Edelstein effect (EE) is symmetry-forbidden, as in centrosymmetric materials; and it adds a new gate-tunable component, generally non-collinear with the conventional one, where the EE is already present. The two fields then act as independent knobs and raise the control dimension of the spin polarization from one to two. Our microscopic theory traces the EEE to band-geometric quantities, which are strongly enhanced near small band gaps. First-principles calculations predict pronounced effects in the centrosymmetric ferromagnet MnSe2, where the linear EE is symmetry-forbidden. In the nonmagnet SnSe where the EE and EEE coexist, the two knobs cover an extended region of the spin sphere. Our findings establish the EEE as a symmetry-guided, gate-tunable route to electrical spin manipulation and open avenues for multistate spintronics in 2D quantum materials.
Related
- Orbital current rectifier and linear magnon Edelstein effect in p-wave antialtermagnets
- Emergence of the magnetic octupole Rashba-Edelstein effect from spin-orbit entanglement
- Manipulation of ferromagnetism with a light-driven nonlinear Edelstein-Zeeman field
- Density-matrix quantum kinetics of spin-mode crossover and ac Edelstein response in spin--orbit-coupled chiral metals
- Extrinsic orbital Edelstein effect from asymmetric scattering
BibTeX
@misc{lv2026electric,
title = {{Electric Edelstein Effect in Two Dimensions}},
author = {Xiaoran Lv and Tianqi Zhang and Chaoxi Cui and Yaling Li and Yi Shen and Weikang Wu and Ziming Zhu and Yugui Yao and Zhi-Ming Yu},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.17535},
eprint = {2610.17535},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.17535},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Electric Edelstein Effect in Two Dimensions
AU - Xiaoran Lv
AU - Tianqi Zhang
AU - Chaoxi Cui
AU - Yaling Li
AU - Yi Shen
AU - Weikang Wu
AU - Ziming Zhu
AU - Yugui Yao
AU - Zhi-Ming Yu
PY - 2026
DA - 2026/10/13
PB - arXiv
DO - 10.48550/arxiv.2610.17535
UR - https://arxiv.org/abs/2610.17535
AB - We propose the electric Edelstein effect (EEE) in two-dimensional (2D) systems, where crossed out-of-plane and in-plane electric fields generate a spin polarization. The gate field converts the Edelstein response from a material-fixed spin polarization into a gate-tunable one. A symmetry analysis over all magnetic layer point groups shows that the EEE is allowed in a wide range of magnetic and nonmagnetic systems, including ferromagnets, antiferromagnets, and altermagnets. The EEE plays two distinct roles: it generates spin polarization where the linear Edelstein effect (EE) is symmetry-forbidden, as in centrosymmetric materials; and it adds a new gate-tunable component, generally non-collinear with the conventional one, where the EE is already present. The two fields then act as independent knobs and raise the control dimension of the spin polarization from one to two. Our microscopic theory traces the EEE to band-geometric quantities, which are strongly enhanced near small band gaps. First-principles calculations predict pronounced effects in the centrosymmetric ferromagnet MnSe2, where the linear EE is symmetry-forbidden. In the nonmagnet SnSe where the EE and EEE coexist, the two knobs cover an extended region of the spin sphere. Our findings establish the EEE as a symmetry-guided, gate-tunable route to electrical spin manipulation and open avenues for multistate spintronics in 2D quantum materials.
ER -