Fractional-Quantum Ferroelectrics: A Route to High-Mobility Ferroelectric Semiconductors
Abstract
Ferroelectric semiconductors are promising for multifunctional electronics, yet their typically low carrier mobilities remain a major limitation. Using first-principles phonon-limited transport calculations for monolayer In2Se3, we show that this limitation depends critically on the microscopic origin of ferroelectricity. In displacive β'-In2Se3, low-frequency ferroelectric modes dominate carrier scattering, with additional contributions from longitudinal-optical (LO) phonons, limiting the room-temperature electron mobility to a few cm2/(V s). By contrast, in fractional-quantum ferroelectric α-In2Se3, ferroelectric-mode scattering is absent because polarization arises from discrete lattice-scale atomic displacements rather than soft-mode condensation. Transport is therefore dominated by LO phonons, yielding a room-temperature mobility above 70 cm2/(V s). Carrier doping further screens long-range electron-LO-phonon interactions and raises the mobility beyond 300 cm2/(V s) at experimentally accessible densities. These results establish that fractional-quantum ferroelectricity can decouple robust polarization from strong intrinsic carrier scattering, offering a route toward high-mobility ferroelectric semiconductors.
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BibTeX
@misc{pang2026fractionalquantum,
title = {{Fractional-Quantum Ferroelectrics: A Route to High-Mobility Ferroelectric Semiconductors}},
author = {Rong-Tian Pang and Wenjie Hu and Youning Liu and Jin-Jian Zhou},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.16799},
eprint = {2609.16799},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.16799},
}
RIS
TY - UNPB
TI - Fractional-Quantum Ferroelectrics: A Route to High-Mobility Ferroelectric Semiconductors
AU - Rong-Tian Pang
AU - Wenjie Hu
AU - Youning Liu
AU - Jin-Jian Zhou
PY - 2026
DA - 2026/09/15
PB - arXiv
DO - 10.48550/arxiv.2609.16799
UR - https://arxiv.org/abs/2609.16799
AB - Ferroelectric semiconductors are promising for multifunctional electronics, yet their typically low carrier mobilities remain a major limitation. Using first-principles phonon-limited transport calculations for monolayer In_2Se_3, we show that this limitation depends critically on the microscopic origin of ferroelectricity. In displacive β'-In_2Se_3, low-frequency ferroelectric modes dominate carrier scattering, with additional contributions from longitudinal-optical (LO) phonons, limiting the room-temperature electron mobility to a few cm^2/(V s). By contrast, in fractional-quantum ferroelectric α-In_2Se_3, ferroelectric-mode scattering is absent because polarization arises from discrete lattice-scale atomic displacements rather than soft-mode condensation. Transport is therefore dominated by LO phonons, yielding a room-temperature mobility above 70 cm^2/(V s). Carrier doping further screens long-range electron-LO-phonon interactions and raises the mobility beyond 300 cm^2/(V s) at experimentally accessible densities. These results establish that fractional-quantum ferroelectricity can decouple robust polarization from strong intrinsic carrier scattering, offering a route toward high-mobility ferroelectric semiconductors.
ER -