Reconfigurable Ferroelectric‐Like Two‐Dimensional Electron Gas at Room Temperature
Abstract
Engineering ferroelectric two‐dimensional electron gases (2DEGs) offers a promising route toward nonvolatile and reconfigurable electronic functionalities, yet room temperature implementations remain scarce. Here, we report a room temperature ferroelectric‐like 2DEG at the SrO‐ interface between (001) (STO) and (KNN) thin films. Robust ferroelectricity is confirmed by piezoforce microscopy, optical second harmonic generation, Nb‐/Ti‐ edges x‐ray linear dichroism, scanning transmission electron microscopy, and macroscopic polarization measurements. The ferroelectric polarization enables nonvolatile control of interfacial transport and the realization of reconfigurable conducting channels with arbitrary geometry at room temperature. The coupling between ferroelectric order and 2DEG conductivity arises from the extension of the polarization into the interfacial unit cells hosting the electron gas. These results establish / heterostructures as a ferroelectric‐like oxide electronic platform, opening pathways for low‐power, nonvolatile electronic and spin‐orbitronic devices.
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BibTeX
@article{rath2026reconfigurable,
title = {{Reconfigurable Ferroelectric‐Like Two‐Dimensional Electron Gas at Room Temperature}},
author = {Martando Rath and Yu Chen and Daniela Stornaiuolo and Aravind Raji and Alexandre Gloter and Antonio Cassinese and Andrea Rubano and Alessia Sambri and Domenico Paparo and Emiliano Di Gennaro and Jérôme Lecourt and Wilfrid Prellier and Francesco Rosa and Nicholas Brookes and Giacomo Ghiringhelli and Daniele Preziosi and Marco Salluzzo},
journal = {Advanced Materials},
year = {2026},
month = jul,
doi = {10.1002/adma.74190},
url = {https://hal.science/hal-05799653v1},
note = {CC BY},
}
RIS
TY - JOUR
TI - Reconfigurable Ferroelectric‐Like Two‐Dimensional Electron Gas at Room Temperature
AU - Martando Rath
AU - Yu Chen
AU - Daniela Stornaiuolo
AU - Aravind Raji
AU - Alexandre Gloter
AU - Antonio Cassinese
AU - Andrea Rubano
AU - Alessia Sambri
AU - Domenico Paparo
AU - Emiliano Di Gennaro
AU - Jérôme Lecourt
AU - Wilfrid Prellier
AU - Francesco Rosa
AU - Nicholas Brookes
AU - Giacomo Ghiringhelli
AU - Daniele Preziosi
AU - Marco Salluzzo
PY - 2026
DA - 2026/07/30
JO - Advanced Materials
DO - 10.1002/adma.74190
UR - https://hal.science/hal-05799653v1
AB - Engineering ferroelectric two‐dimensional electron gases (2DEGs) offers a promising route toward nonvolatile and reconfigurable electronic functionalities, yet room temperature implementations remain scarce. Here, we report a room temperature ferroelectric‐like 2DEG at the SrO‐ interface between (001) (STO) and (KNN) thin films. Robust ferroelectricity is confirmed by piezoforce microscopy, optical second harmonic generation, Nb‐/Ti‐ edges x‐ray linear dichroism, scanning transmission electron microscopy, and macroscopic polarization measurements. The ferroelectric polarization enables nonvolatile control of interfacial transport and the realization of reconfigurable conducting channels with arbitrary geometry at room temperature. The coupling between ferroelectric order and 2DEG conductivity arises from the extension of the polarization into the interfacial unit cells hosting the electron gas. These results establish / heterostructures as a ferroelectric‐like oxide electronic platform, opening pathways for low‐power, nonvolatile electronic and spin‐orbitronic devices.
SN - 0935-9648
SN - 1521-4095
ER -