Unipolar Barrier Near‐Infrared 2D Photodetectors for 3D Image Sensors
13 affiliations
- 1Center for Quantum Technology Post‐Silicon Semiconductor Institute Korea Institute of Science and Technology (KIST) Seoul Republic of Korea
- 2KU‐KIST Graduate School of Converging Science and Technology Korea University Seoul Republic of Korea
- 3Department of Electrical and Electronic Engineering Yonsei University Seoul Republic of Korea
- 4Department of Electric Engineering Display & Semiconductor Engineering Pukyong National University Busan Republic of Korea
- 5Department of Physics Changwon National University Changwon Republic of Korea
- 6Department of Computer Science and Engineering Korea University Seoul Republic of Korea
- 7Department of Mechanical Engineering Seoul National University Seoul Republic of Korea
- 8Department of Ophthalmology Korea University College of Medicine Guro Hospital Seoul Republic of Korea
- 9Department of Physics Kunsan National University Gunsan Republic of Korea
- 10Department of Electronic and Communication Information Engineering College Hangzhou Dianzi University Hangzhou China
- 11Hologram Research Center Korea Electronics Technology Institute (KETI) Seoul Republic of Korea
- 12Spatial Optical Information Research Center Korea Photonics Technology Institute (KOPTI) Gwangju Republic of Korea
- 13Division of Nanoscience & Technology, KIST School University of Science and Technology (UST) Seoul Republic of Korea
Abstract
Photodetectors sensitive to the near‐infrared (NIR) range are of great importance for applications in machine vision, autonomous driving, and three‐dimensional (3D) imaging under low‐light or adverse weather conditions. Recently, two‐dimensional (2D) semiconductors have emerged as promising light‐absorbing materials for NIR detection. However, the inevitable majority‐carrier injection from the electrode fundamentally leads to high dark current and poor light‐detection capability, which has constrained the development of 2D semiconductor photodetectors so far. Here, we demonstrate a high‐detectivity NIR photodetector based on a MoTe2/WSe2/Cl–SnSe2 unipolar barrier heterostructure. The WSe2 layer acts as an efficient majority‐carrier‐blocking barrier, effectively suppressing dark current and achieving a room‐temperature specific detectivity of 6.75 × 108 Jones, a linear dynamic range of 62 dB, and an effective −3 dB bandwidth approaching 0.1 MHz under 1310 nm illumination. Using this device as an imager, we show 3D NIR imaging of real objects under low‐illumination conditions, highlighting its potential for applications such as vein visualization and material identification.
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BibTeX
@article{hong2026unipolar,
title = {{Unipolar Barrier Near‐Infrared 2D Photodetectors for 3D Image Sensors}},
author = {Jung Pyo Hong and Sang‐Jun Kim and Jisu Jang and Je‐Jun Lee and Seong‐Jun Han and Eungseon Yeon and Jung Woo Kim and Jongtae Ahn and Sang Yeon Kim and Hyun Woo Ko and Sunghyun Han and Seung Ah Lee and Paul Hongsuck Seo and Young‐Woo Suh and Kimoon Lee and Gunuk Wang and Dong‐Guang Zheng and Sunghee Hong and Sangin Hahn and Seon Kyu Yoon and Min‐Chul Park and Do Kyung Hwang},
journal = {Advanced Science},
year = {2026},
month = aug,
doi = {10.1002/advs.77017},
url = {https://doi.org/10.1002/advs.77017},
note = {CC BY 4.0},
}
RIS
TY - JOUR
TI - Unipolar Barrier Near‐Infrared 2D Photodetectors for 3D Image Sensors
AU - Jung Pyo Hong
AU - Sang‐Jun Kim
AU - Jisu Jang
AU - Je‐Jun Lee
AU - Seong‐Jun Han
AU - Eungseon Yeon
AU - Jung Woo Kim
AU - Jongtae Ahn
AU - Sang Yeon Kim
AU - Hyun Woo Ko
AU - Sunghyun Han
AU - Seung Ah Lee
AU - Paul Hongsuck Seo
AU - Young‐Woo Suh
AU - Kimoon Lee
AU - Gunuk Wang
AU - Dong‐Guang Zheng
AU - Sunghee Hong
AU - Sangin Hahn
AU - Seon Kyu Yoon
AU - Min‐Chul Park
AU - Do Kyung Hwang
PY - 2026
DA - 2026/08/10
JO - Advanced Science
DO - 10.1002/advs.77017
UR - https://doi.org/10.1002/advs.77017
AB - Photodetectors sensitive to the near‐infrared (NIR) range are of great importance for applications in machine vision, autonomous driving, and three‐dimensional (3D) imaging under low‐light or adverse weather conditions. Recently, two‐dimensional (2D) semiconductors have emerged as promising light‐absorbing materials for NIR detection. However, the inevitable majority‐carrier injection from the electrode fundamentally leads to high dark current and poor light‐detection capability, which has constrained the development of 2D semiconductor photodetectors so far. Here, we demonstrate a high‐detectivity NIR photodetector based on a MoTe2/WSe2/Cl–SnSe2 unipolar barrier heterostructure. The WSe2 layer acts as an efficient majority‐carrier‐blocking barrier, effectively suppressing dark current and achieving a room‐temperature specific detectivity of 6.75 × 108 Jones, a linear dynamic range of 62 dB, and an effective −3 dB bandwidth approaching 0.1 MHz under 1310 nm illumination. Using this device as an imager, we show 3D NIR imaging of real objects under low‐illumination conditions, highlighting its potential for applications such as vein visualization and material identification.
SN - 2198-3844
ER -