Dose-Insensitive Defect Engineering, Carrier Kinetics, and Reproducible Chromaticity Tuning in Ion-Implanted InGaN/GaN Quantum Wells
Abstract
Post-growth defect engineering via ion implantation provides a powerful pathway for spatial optical profiling and colour patterning in III-V alloying photonic integration. However, the comprehensive recombination kinetics governing deep-level defect saturation and excitonic recovery under high-temperature annealing remain insufficiently understood. Here, we present a systematic study on the optical dynamics, rate-equation kinetics, and chromaticity evolution of indium-implanted InGaN/GaN multiple quantum wells (MQWs) across implantation doses (5E14 to 5E16 ions cm^-2) and subsequent thermal annealing stages (500 to 1100 deg C). Photoluminescence (PL) spectrum analysis reveals that a dose of <= 5E14 ions cm^-2 induces a modification of the optical response that does not further change upon high-dose implantation. A two-channel coupled rate-equation model is fitted to the data, optimised via differential evolution, allowing the extraction of transition rate constants. This demonstrates that thermal processing at 1000 deg C suppresses the carrier capture rate into deep-level states and also reduces its radiative recombination rate. This kinetic bottleneck drives an order-of-magnitude extension in the channel-specific radiative lifetime. Leveraging the excitation power density dependence of the differential recombination kinetics, where deep defects saturate whilst MQW emission scales near-linearly, we achieve a universal and power density-tunable chromaticity trajectory from warm yellow to cool white-blue emission. These insights enable microscopic defect physics to be linked to the macro-scale colour tailoring observed.
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BibTeX
@misc{liu2026doseinsensitive,
title = {{Dose-Insensitive Defect Engineering, Carrier Kinetics, and Reproducible Chromaticity Tuning in Ion-Implanted InGaN/GaN Quantum Wells}},
author = {Quan-Shan Liu and Mason Adshead and Sadia Sheraz and Maddison Coke and Nicholas Lockyer and Richard J. Curry},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.22648},
eprint = {2609.22648},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.22648},
}
RIS
TY - UNPB
TI - Dose-Insensitive Defect Engineering, Carrier Kinetics, and Reproducible Chromaticity Tuning in Ion-Implanted InGaN/GaN Quantum Wells
AU - Quan-Shan Liu
AU - Mason Adshead
AU - Sadia Sheraz
AU - Maddison Coke
AU - Nicholas Lockyer
AU - Richard J. Curry
PY - 2026
DA - 2026/09/18
PB - arXiv
DO - 10.48550/arxiv.2609.22648
UR - https://arxiv.org/abs/2609.22648
AB - Post-growth defect engineering via ion implantation provides a powerful pathway for spatial optical profiling and colour patterning in III-V alloying photonic integration. However, the comprehensive recombination kinetics governing deep-level defect saturation and excitonic recovery under high-temperature annealing remain insufficiently understood. Here, we present a systematic study on the optical dynamics, rate-equation kinetics, and chromaticity evolution of indium-implanted InGaN/GaN multiple quantum wells (MQWs) across implantation doses (5E14 to 5E16 ions cm^-2) and subsequent thermal annealing stages (500 to 1100 deg C). Photoluminescence (PL) spectrum analysis reveals that a dose of <= 5E14 ions cm^-2 induces a modification of the optical response that does not further change upon high-dose implantation. A two-channel coupled rate-equation model is fitted to the data, optimised via differential evolution, allowing the extraction of transition rate constants. This demonstrates that thermal processing at 1000 deg C suppresses the carrier capture rate into deep-level states and also reduces its radiative recombination rate. This kinetic bottleneck drives an order-of-magnitude extension in the channel-specific radiative lifetime. Leveraging the excitation power density dependence of the differential recombination kinetics, where deep defects saturate whilst MQW emission scales near-linearly, we achieve a universal and power density-tunable chromaticity trajectory from warm yellow to cool white-blue emission. These insights enable microscopic defect physics to be linked to the macro-scale colour tailoring observed.
ER -