Low contact resistance and high current density in ballistic p-type transistors based on oxygen-doped WSe2 monolayers
Abstract
The development of high-performance p-type monolayer transistors is critical for extending two-dimensional (2D) semiconductors beyond silicon in sub 1-nm technology nodes for complementary metal–oxide–semiconductor (CMOS) circuits. However, insufficient doping and metal-induced gap states (MIGS) during metal deposition lead to high contact resistance, greatly limiting p-type on-state currents. Here, we demonstrate high-performance ballistic p-type monolayer tungsten diselenide (WSe ₂ ) transistors by oxygen p-doping. The controllable oxygen doping greatly reduces the number of Se vacancy defects in as-grown WSe ₂ , and thus increases the hole mobility from 55 to 218.3 cm ² V ⁻¹ s ⁻¹ —approaching the theoretical limit. Moreover, this approach also induces a heavily hole-doped contact region in p-type monolayer WSe ₂ devices and decreases the contact resistance from 1869 Ω·μm down to 104 Ω·μm. Consequently, a 16-nm-channel WSe ₂ p-type field effect transistor (pFET) delivers a saturation current of up to 1635 μA μm ⁻¹ at a drain voltage of −1.2 V and a ballistic ratio as high as 81% at room temperature.
Related
- Non-monotonic thickness dependence of MoS₂–Sb contact resistance driven by bandgap and interlayer transport
- High–Performance and Low–Power Complementary Transistors Based on Red Carbon Ribbon
- High-performance p-type two-dimensional transistors enabled by weak disorder engineering
- Stretchable Wireless Sensing-Computing Biointerfaces Enabled by High-Voltage Megahertz Electrochemical Transistors
- Quasi-Ballistic Thermal Transport in Vertically Aligned h-BN
BibTeX
@article{sun2026contact,
title = {{Low contact resistance and high current density in ballistic p-type transistors based on oxygen-doped WSe2 monolayers}},
author = {Lei Sun and Tingting Gao and Lin Xu and Wanying Li and Chuanqi Zhang and Zhengyu Zhang and Kian Ping Loh and Yuhui He and Kaustav Banerjee and Yang Chai and Lain-Jong Li and Xiangshui Miao and Xuefei Li},
journal = {Nature Communications},
year = {2026},
month = oct,
doi = {10.1038/s41467-026-78157-w},
url = {https://www.nature.com/articles/s41467-026-78157-w},
note = {CC BY 4.0},
}
RIS
TY - JOUR
TI - Low contact resistance and high current density in ballistic p-type transistors based on oxygen-doped WSe2 monolayers
AU - Lei Sun
AU - Tingting Gao
AU - Lin Xu
AU - Wanying Li
AU - Chuanqi Zhang
AU - Zhengyu Zhang
AU - Kian Ping Loh
AU - Yuhui He
AU - Kaustav Banerjee
AU - Yang Chai
AU - Lain-Jong Li
AU - Xiangshui Miao
AU - Xuefei Li
PY - 2026
DA - 2026/10/01
JO - Nature Communications
DO - 10.1038/s41467-026-78157-w
UR - https://www.nature.com/articles/s41467-026-78157-w
AB - The development of high-performance p-type monolayer transistors is critical for extending two-dimensional (2D) semiconductors beyond silicon in sub 1-nm technology nodes for complementary metal–oxide–semiconductor (CMOS) circuits. However, insufficient doping and metal-induced gap states (MIGS) during metal deposition lead to high contact resistance, greatly limiting p-type on-state currents. Here, we demonstrate high-performance ballistic p-type monolayer tungsten diselenide (WSe ₂ ) transistors by oxygen p-doping. The controllable oxygen doping greatly reduces the number of Se vacancy defects in as-grown WSe ₂ , and thus increases the hole mobility from 55 to 218.3 cm ² V ⁻¹ s ⁻¹ —approaching the theoretical limit. Moreover, this approach also induces a heavily hole-doped contact region in p-type monolayer WSe ₂ devices and decreases the contact resistance from 1869 Ω·μm down to 104 Ω·μm. Consequently, a 16-nm-channel WSe ₂ p-type field effect transistor (pFET) delivers a saturation current of up to 1635 μA μm ⁻¹ at a drain voltage of −1.2 V and a ballistic ratio as high as 81% at room temperature.
SN - 2041-1723
ER -