Delta-Doped GeV^- in diamond with isotope resolvable optical spectra

Abstract

Group IV color centers in diamond -- silicon, germanium, tin, and lead-vacancy centers -- are a promising platform for quantum networking. Typical Group-IV creation utilizes ion implantation during diamond growth that leaves the color centers with a broad depth distribution and damage-induced strain inhomogeneity. Deterministic placement and damage reduction in Group IV generation are essential for improving this platform. In this letter, we report on the localization of germanium-vacancy (GeV^-) to a < 10 nm layer via the timed injection of GeH₄ during microwave plasma chemical vapor deposition. In this layer we have realized 17 ppm of Ge and a strain-free environment for the GeV^-. Subsequent electron irradiation and annealing have generated a sheet density of 0.12 GeV^-/μm². The minimal damage from color center generation mitigates spectral inhomogeneity and allows spectral resolution of isotopic clusters, with the best cluster having an inhomogeneous distribution of 2.14 GHz and an average linewidth of 47 ± 11 MHz. Our study gives insight into formation dynamics of GeV^- in delta-doped systems and estimates our vacancy to GeV^- yield to be ≥ 90%, establishing an athermal nearest-neighbor formation model. We further characterized the spin T₂^* and set a lower bound of 730 ns, limited by a paramagnetic defect.

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Cite

BibTeX RIS

BibTeX

@misc{hammock2026deltadoped,
  title = {{Delta-Doped GeV$^-$ in diamond with isotope resolvable optical spectra}},
  author = {Ian N. Hammock and Kinfung Ngan and Antoni W. Wellisz and Keira Linder and Midrel Wilfried Ngandeu Ngambou and Jiefei Zhang and Xinghan Guo and Benjamin Pingault and Shuo Sun and David D. Awschalom and F. Joseph Heremans and Alexander A. High and Nazar Delegan},
  howpublished = {arXiv},
  year = {2026},
  month = oct,
  doi = {10.48550/arxiv.2610.30375},
  eprint = {2610.30375},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2610.30375},
  note = {CC BY 4.0},
}

RIS

TY  - UNPB
TI  - Delta-Doped GeV^- in diamond with isotope resolvable optical spectra
AU  - Ian N. Hammock
AU  - Kinfung Ngan
AU  - Antoni W. Wellisz
AU  - Keira Linder
AU  - Midrel Wilfried Ngandeu Ngambou
AU  - Jiefei Zhang
AU  - Xinghan Guo
AU  - Benjamin Pingault
AU  - Shuo Sun
AU  - David D. Awschalom
AU  - F. Joseph Heremans
AU  - Alexander A. High
AU  - Nazar Delegan
PY  - 2026
DA  - 2026/10/21
PB  - arXiv
DO  - 10.48550/arxiv.2610.30375
UR  - https://arxiv.org/abs/2610.30375
AB  - Group IV color centers in diamond -- silicon, germanium, tin, and lead-vacancy centers -- are a promising platform for quantum networking. Typical Group-IV creation utilizes ion implantation during diamond growth that leaves the color centers with a broad depth distribution and damage-induced strain inhomogeneity. Deterministic placement and damage reduction in Group IV generation are essential for improving this platform. In this letter, we report on the localization of germanium-vacancy (GeV^-) to a < 10 nm layer via the timed injection of GeH_4 during microwave plasma chemical vapor deposition. In this layer we have realized 17 ppm of Ge and a strain-free environment for the GeV^-. Subsequent electron irradiation and annealing have generated a sheet density of 0.12 GeV^-/μm^2. The minimal damage from color center generation mitigates spectral inhomogeneity and allows spectral resolution of isotopic clusters, with the best cluster having an inhomogeneous distribution of 2.14 GHz and an average linewidth of 47 ± 11 MHz. Our study gives insight into formation dynamics of GeV^- in delta-doped systems and estimates our vacancy to GeV^- yield to be ≥ 90%, establishing an athermal nearest-neighbor formation model. We further characterized the spin T_2^* and set a lower bound of 730 ns, limited by a paramagnetic defect.
ER  -

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