Skip to content
DraconiticResearch
Search Sources API
203,234 studies31 sourcesUpdated 58 min ago
PreprintarXiv licencearXiv

Co-design of Silicon Microring Modulator beyond 200 Gb/s per Lane: Device Physics, Operating Point, and Compact Models for Scale-Up and Scale-Out Optical I/O

Abstract

Optical input/output (I/O) supports high-bandwidth communication between processors in artificial intelligence (AI) systems. Depletion-mode silicon microring modulators offer compact footprints, wavelength multiplexing and femtojoule-scale junction switching energy per bit. However, as lane rates increase to 200~Gb/s and beyond, a digital signal processor (DSP) performing equalization and forward-error correction can consume up to half of the optical module power. We analyze the junction and cavity physics of silicon microring modulators, relating modulation efficiency, capacitance, optical loss and coupling to bandwidth and drive requirements to guide device optimization above 200~Gb/s per lane. Laser detuning and optimal operating points are examined by distinguishing maximum static slope, static and dynamic OMA, and gain--bandwidth product (GBW), including the influence of the junction RC response. The effects of optical self-heating, photocarriers and bias-network voltage droop on the resonance are discussed together with heater tuning and wavelength assignment in DWDM arrays. Cold-resonance design points are calculated from the required hot detuning, link-budget-derived optical power and assumed thermal parameters, with heater reserve and startup acquisition included as design constraints. A compact model of the coupled electrical, optical and thermal dynamics is used to evaluate PAM4 eye diagrams, and a Verilog-A implementation of the model core is provided for circuit-level simulation.

Related

  1. BIC-Engineered Silicon Nitride Microring Resonators Enabled by an Etch-Free Laser-Writing Approach
    Leila Hajshahvaladi, Mohammad Amin Salmani, Media Abbasi +3
    arXivPreprintarXiv licenceFull textOptics & photonicsarXiv
  2. Ultra-broadband (1.3–2.5 μm) and highly efficient graphene electro-optic modulator based on a buried silicon waveguide
    Sawatsakorn Chaiyasoonthorn, Sahatsanai Nuchyothin, Chawinwat Chouchoay +3
    Optics ExpressPeer-reviewedPublisher termsOptics & photonicsCrossref
  3. Compact thermo-optic switch based on graphene-silicon nitride nanobeam cavity
    Yunjie Li, Jingming Chan, Huaixu Chen +3
    Optics ExpressPeer-reviewedPublisher termsOptics & photonicsCrossref
  4. Broadband effective-loss characterization and application bounds of compact silicon nitride spiral waveguides
    Teresa Natale, Todora Ivanova, JUAN HURTADO +4
    Optics ExpressPeer-reviewedLicence not statedOptics & photonicsCrossref
  5. Single-step initialization of a 16-channel silicon nitride DWDM demultiplexer using a physics-informed digital twin
    Zuyang Liu, Joyce K. S. Poon
    Optics ExpressPeer-reviewedPublisher termsOptics & photonicsCrossref
BibTeX
@misc{huang2026codesign,
  title = {{Co-design of Silicon Microring Modulator beyond 200 Gb/s per Lane: Device Physics, Operating Point, and Compact Models for Scale-Up and Scale-Out Optical I/O}},
  author = {Zhihong Huang and Yuan Yuan and Yiwei Peng and Samuel Palermo and Marco Fiorentino and Raymond G. Beausoleil},
  howpublished = {arXiv},
  year = {2026},
  month = sep,
  doi = {10.48550/arxiv.2609.36690},
  eprint = {2609.36690},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2609.36690},
}
RIS
TY  - UNPB
TI  - Co-design of Silicon Microring Modulator beyond 200 Gb/s per Lane: Device Physics, Operating Point, and Compact Models for Scale-Up and Scale-Out Optical I/O
AU  - Zhihong Huang
AU  - Yuan Yuan
AU  - Yiwei Peng
AU  - Samuel Palermo
AU  - Marco Fiorentino
AU  - Raymond G. Beausoleil
PY  - 2026
DA  - 2026/09/29
PB  - arXiv
DO  - 10.48550/arxiv.2609.36690
UR  - https://arxiv.org/abs/2609.36690
AB  - Optical input/output (I/O) supports high-bandwidth communication between processors in artificial intelligence (AI) systems. Depletion-mode silicon microring modulators offer compact footprints, wavelength multiplexing and femtojoule-scale junction switching energy per bit. However, as lane rates increase to 200~Gb/s and beyond, a digital signal processor (DSP) performing equalization and forward-error correction can consume up to half of the optical module power. We analyze the junction and cavity physics of silicon microring modulators, relating modulation efficiency, capacitance, optical loss and coupling to bandwidth and drive requirements to guide device optimization above 200~Gb/s per lane. Laser detuning and optimal operating points are examined by distinguishing maximum static slope, static and dynamic OMA, and gain--bandwidth product (GBW), including the influence of the junction RC response. The effects of optical self-heating, photocarriers and bias-network voltage droop on the resonance are discussed together with heater tuning and wavelength assignment in DWDM arrays. Cold-resonance design points are calculated from the required hot detuning, link-budget-derived optical power and assumed thermal parameters, with heater reserve and startup acquisition included as design constraints. A compact model of the coupled electrical, optical and thermal dynamics is used to evaluate PAM4 eye diagrams, and a Verilog-A implementation of the model core is provided for circuit-level simulation.
ER  -