Edelstein Effect in Ferromagnetic Monolayers Fe3GaTe2 and Fe3GeTe2
Abstract
The Edelstein effect enables intrinsic current-induced spin polarization in noncentrosymmetric van der Waals magnets. Here, we compare the Edelstein responses of monolayer \ce{Fe3GaTe2} and \ce{Fe3GeTe2} using first-principles Wannier-based linear-response calculations. Despite sharing the same noncentrosymmetric D3h symmetry and selection rules, the two materials show markedly different time-reversal-even and -odd spin accumulations in magnitude, sign, and energy dependence. Strong responses occur mainly near −0.4~eV in \ce{Fe3GaTe2} and +0.4~eV in \ce{Fe3GeTe2}. At the intrinsic Fermi level, atom-resolved analysis shows that Ga-to-Ge substitution reverses the even contribution of the inequivalent Fe3 site for both in-plane magnetization directions and enhances its negative odd contribution, reorganizing the cancellation among atomic sites. Momentum-resolved calculations link the hole-side response of \ce{Fe3GaTe2} to a few large Γ-centered Fermi contours, whereas the electron-side response of \ce{Fe3GeTe2} involves dense Fe-3d bands with strong interband contributions. The even response arises from incomplete cancellation of opposite-sign intraband Fermi-surface contributions, while the odd response originates from interband coherence between closely spaced states. Magnetization rotation reveals symmetry-constrained angular dependences with higher-order harmonics, especially in the xz plane, while biaxial strain causes substantial amplitude changes and sign reversals. These results show how crystal symmetry, electronic structure, magnetization orientation, and lattice deformation govern the intrinsic Edelstein effect in \ce{Fe3XTe2} (X=Ga,Ge).
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BibTeX
@misc{li2026edelstein,
title = {{Edelstein Effect in Ferromagnetic Monolayers Fe3GaTe2 and Fe3GeTe2}},
author = {Tongrui Li and Lidong Zhang and Weiyi Pan},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.34296},
eprint = {2610.34296},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.34296},
}
RIS
TY - UNPB
TI - Edelstein Effect in Ferromagnetic Monolayers Fe3GaTe2 and Fe3GeTe2
AU - Tongrui Li
AU - Lidong Zhang
AU - Weiyi Pan
PY - 2026
DA - 2026/10/25
PB - arXiv
DO - 10.48550/arxiv.2610.34296
UR - https://arxiv.org/abs/2610.34296
AB - The Edelstein effect enables intrinsic current-induced spin polarization in noncentrosymmetric van der Waals magnets. Here, we compare the Edelstein responses of monolayer \ce{Fe3GaTe2} and \ce{Fe3GeTe2} using first-principles Wannier-based linear-response calculations. Despite sharing the same noncentrosymmetric D_3h symmetry and selection rules, the two materials show markedly different time-reversal-even and -odd spin accumulations in magnitude, sign, and energy dependence. Strong responses occur mainly near −0.4~eV in \ce{Fe3GaTe2} and +0.4~eV in \ce{Fe3GeTe2}. At the intrinsic Fermi level, atom-resolved analysis shows that Ga-to-Ge substitution reverses the even contribution of the inequivalent Fe3 site for both in-plane magnetization directions and enhances its negative odd contribution, reorganizing the cancellation among atomic sites. Momentum-resolved calculations link the hole-side response of \ce{Fe3GaTe2} to a few large Γ-centered Fermi contours, whereas the electron-side response of \ce{Fe3GeTe2} involves dense Fe-3d bands with strong interband contributions. The even response arises from incomplete cancellation of opposite-sign intraband Fermi-surface contributions, while the odd response originates from interband coherence between closely spaced states. Magnetization rotation reveals symmetry-constrained angular dependences with higher-order harmonics, especially in the xz plane, while biaxial strain causes substantial amplitude changes and sign reversals. These results show how crystal symmetry, electronic structure, magnetization orientation, and lattice deformation govern the intrinsic Edelstein effect in \ce{Fe3XTe2} (X=Ga,Ge).
ER -