Reducing the Gate-Induced Drain-Leakage Current of Carbon-Nanotube Transistors by Subliming Dispersants with Back-End-of-Line Compatible Temperature
Abstract
Carbon nanotube field-effect transistors (CNTFETs) are promising for monolithic 3D integration with silicon CMOS circuits in back-end-of-line (BEOL) processes. Further reduction in off-state leakage is essential for practical applications. In this study, we develop a low-temperature cleaning process for CNT-deposited wafers using a sublimable CNT dispersant. The process is carried out below 250 °C, making it BEOL-compatible, and does not deteriorate CNT morphology or lattice structure, as confirmed by atomic force microscopy and Raman spectroscopy. As a result, gate-induced drain leakage current originating from residual dispersants is reduced by approximately one order of magnitude. In addition, improvements in on-current, subthreshold slope, and threshold voltage variability are observed after the cleaning process. This study demonstrates a material-enabled approach to improve the transfer characteristics of CNTFETs and provides a practical route toward low-power CNT electronics.
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BibTeX
@misc{inaba2026reducing,
title = {{Reducing the Gate-Induced Drain-Leakage Current of Carbon-Nanotube Transistors by Subliming Dispersants with Back-End-of-Line Compatible Temperature}},
author = {Takumi Inaba and Yuichi Kato and Yoko Iizumi and Yasuhiko Fujita and Kazufumi Kobashi and Takahiro Morimoto and Toshiya Okazaki},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.13583},
eprint = {2609.13583},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.13583},
note = {CC BY-NC-ND 4.0},
}
RIS
TY - UNPB
TI - Reducing the Gate-Induced Drain-Leakage Current of Carbon-Nanotube Transistors by Subliming Dispersants with Back-End-of-Line Compatible Temperature
AU - Takumi Inaba
AU - Yuichi Kato
AU - Yoko Iizumi
AU - Yasuhiko Fujita
AU - Kazufumi Kobashi
AU - Takahiro Morimoto
AU - Toshiya Okazaki
PY - 2026
DA - 2026/09/11
PB - arXiv
DO - 10.48550/arxiv.2609.13583
UR - https://arxiv.org/abs/2609.13583
AB - Carbon nanotube field-effect transistors (CNTFETs) are promising for monolithic 3D integration with silicon CMOS circuits in back-end-of-line (BEOL) processes. Further reduction in off-state leakage is essential for practical applications. In this study, we develop a low-temperature cleaning process for CNT-deposited wafers using a sublimable CNT dispersant. The process is carried out below 250 °C, making it BEOL-compatible, and does not deteriorate CNT morphology or lattice structure, as confirmed by atomic force microscopy and Raman spectroscopy. As a result, gate-induced drain leakage current originating from residual dispersants is reduced by approximately one order of magnitude. In addition, improvements in on-current, subthreshold slope, and threshold voltage variability are observed after the cleaning process. This study demonstrates a material-enabled approach to improve the transfer characteristics of CNTFETs and provides a practical route toward low-power CNT electronics.
ER -