All-dry processing of 3C-SiC nanomechanical string resonators for extreme aspect ratios and high intrinsic quality factor
Abstract
Conventional fabrication of suspended nanomechanical resonators typically relies on wet-chemical process steps and critical point drying, which can compromise sample yield and cleanliness. Here, we present an all-dry fabrication process for strongly stressed 3C-SiC nanomechanical string resonators that entirely avoids wet-chemical etching and cleaning. Using a negative-tone electron-beam resist as an etch mask and a three-step reactive-ion etching process for both structuring and release, we achieve high fabrication yield, clean suspended structures, and extreme aspect ratios of 8.500. We perform full mechanical characterization of the resulting doubly-clamped nanostring resonators, and establish a benchmark intrinsic quality factor for dissipation-diluted 3C-SiC of Qintr = 4.200.
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BibTeX
@misc{david2026alldry,
title = {{All-dry processing of 3C-SiC nanomechanical string resonators for extreme aspect ratios and high intrinsic quality factor}},
author = {Felix David and Philipp Bredol and Yannick S. Klaß and Eva M. Weig},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.02530},
eprint = {2609.02530},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.02530},
note = {CC BY-NC-SA 4.0},
}
RIS
TY - UNPB
TI - All-dry processing of 3C-SiC nanomechanical string resonators for extreme aspect ratios and high intrinsic quality factor
AU - Felix David
AU - Philipp Bredol
AU - Yannick S. Klaß
AU - Eva M. Weig
PY - 2026
DA - 2026/09/04
PB - arXiv
DO - 10.48550/arxiv.2609.02530
UR - https://arxiv.org/abs/2609.02530
AB - Conventional fabrication of suspended nanomechanical resonators typically relies on wet-chemical process steps and critical point drying, which can compromise sample yield and cleanliness. Here, we present an all-dry fabrication process for strongly stressed 3C-SiC nanomechanical string resonators that entirely avoids wet-chemical etching and cleaning. Using a negative-tone electron-beam resist as an etch mask and a three-step reactive-ion etching process for both structuring and release, we achieve high fabrication yield, clean suspended structures, and extreme aspect ratios of 8.500. We perform full mechanical characterization of the resulting doubly-clamped nanostring resonators, and establish a benchmark intrinsic quality factor for dissipation-diluted 3C-SiC of Qintr = 4.200.
ER -