Si- and C-Induced Modifications in Vapor-Solid-Grown InGaAs Nanowires: From Crystal Structure to Carrier Dynamics
Abstract
Determining the impact of dopants in ternary III-V nanowires (NWs) is crucial for their applications in next-generation optoelectronic and photonic devices; however, the interplay between dopant species, crystal structure, and carrier dynamics in vapor-solid-grown InGaAs NWs remains underexplored. In this study, the influence of silicon (Si) and carbon (C) doping on the structural, morphological, and optical properties of catalyst-free, selective-area grown InGaAs NWs fabricated by molecular beam epitaxy is investigated. Scanning electron microscopy demonstrates that C-doping increases the NW aspect ratio by over 100% compared to undoped NWs, while a concomitant decrease in their planar defect density is observed, indicating enhanced crystal quality with C-doping. Despite their superior crystal quality, the C-doped NWs present a diminished photoluminescence intensity, due to point defects and increased surface recombination velocity. This is further supported by time-resolved photoluminescence spectroscopy, revealing accelerated non-radiative recombination in the C-doped NWs. Lastly, hot-carrier effects in these nanostructures are studied, and their signatures remain observable, albeit with reduced intensity in both Si- and C-doped NWs. This comprehensive study establishes clear correlations between doping parameters and the resulting material characteristics and carrier dynamics, offering valuable insights into the fundamental mechanisms governing the VS-grown InGaAs NWs and their implications in optoelectronic devices.
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BibTeX
@misc{esmaielpour2026cinduced,
title = {{Si- and C-Induced Modifications in Vapor-Solid-Grown InGaAs Nanowires: From Crystal Structure to Carrier Dynamics}},
author = {Hamidreza Esmaielpour and Leopold Rothmayer and Thomas Trinkl and Laura Niermann and Tore Niermann and Michael Lehmann and Jonathan J. Finley and Gregor Koblmüller},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.19332},
eprint = {2609.19332},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.19332},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Si- and C-Induced Modifications in Vapor-Solid-Grown InGaAs Nanowires: From Crystal Structure to Carrier Dynamics
AU - Hamidreza Esmaielpour
AU - Leopold Rothmayer
AU - Thomas Trinkl
AU - Laura Niermann
AU - Tore Niermann
AU - Michael Lehmann
AU - Jonathan J. Finley
AU - Gregor Koblmüller
PY - 2026
DA - 2026/09/16
PB - arXiv
DO - 10.48550/arxiv.2609.19332
UR - https://arxiv.org/abs/2609.19332
AB - Determining the impact of dopants in ternary III-V nanowires (NWs) is crucial for their applications in next-generation optoelectronic and photonic devices; however, the interplay between dopant species, crystal structure, and carrier dynamics in vapor-solid-grown InGaAs NWs remains underexplored. In this study, the influence of silicon (Si) and carbon (C) doping on the structural, morphological, and optical properties of catalyst-free, selective-area grown InGaAs NWs fabricated by molecular beam epitaxy is investigated. Scanning electron microscopy demonstrates that C-doping increases the NW aspect ratio by over 100% compared to undoped NWs, while a concomitant decrease in their planar defect density is observed, indicating enhanced crystal quality with C-doping. Despite their superior crystal quality, the C-doped NWs present a diminished photoluminescence intensity, due to point defects and increased surface recombination velocity. This is further supported by time-resolved photoluminescence spectroscopy, revealing accelerated non-radiative recombination in the C-doped NWs. Lastly, hot-carrier effects in these nanostructures are studied, and their signatures remain observable, albeit with reduced intensity in both Si- and C-doped NWs. This comprehensive study establishes clear correlations between doping parameters and the resulting material characteristics and carrier dynamics, offering valuable insights into the fundamental mechanisms governing the VS-grown InGaAs NWs and their implications in optoelectronic devices.
ER -