Photoluminescence study of Vanadium in 4H- and 6H- Silicon Carbide
Abstract
Point defects with optically addressable spin states are a key building block for quantum networks, but few solid-state emitters combine a spin-photon interface with emission in the low-loss telecommunications band. Vanadium (V4+) defects in silicon carbide (SiC) meet this requirement, emitting zero-phonon lines (ZPLs) throughout the telecom O-band in both the 4H- and 6H-SiC polytypes while retaining an addressable electron and nuclear spin system [1,2]. Although the orbital and spin structure of these defects has been characterized in detail, the polarization selection rules have not been fully mapped experimentally. Here we present polarization-dependent photoluminescence (PL) measurements of vanadium ZPLs in 4H- and 6H-SiC at cryogenic temperature, of two scattering geometries: edge and face-on (emission wavevector perpendicular and parallel to the crystal c-axis, respectively). Emission from two of the four α sites, (α2 and α3) and the 6H-SiC γ sites, are polarized parallel to the c-axis (σ-polarized), whereas emission from α1 and α4 are polarized perpendicular to the c-axis (π-polarized). Additionally, we report preliminary, lower signal measurements of the \b{eta} sites.
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BibTeX
@misc{boulares2026photoluminescence,
title = {{Photoluminescence study of Vanadium in 4H- and 6H- Silicon Carbide}},
author = {Ibrahim Boulares and Anne R. Evans and Jeremy L. Smith and Brenda VanMil},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.10781},
eprint = {2610.10781},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.10781},
}
RIS
TY - UNPB
TI - Photoluminescence study of Vanadium in 4H- and 6H- Silicon Carbide
AU - Ibrahim Boulares
AU - Anne R. Evans
AU - Jeremy L. Smith
AU - Brenda VanMil
PY - 2026
DA - 2026/10/07
PB - arXiv
DO - 10.48550/arxiv.2610.10781
UR - https://arxiv.org/abs/2610.10781
AB - Point defects with optically addressable spin states are a key building block for quantum networks, but few solid-state emitters combine a spin-photon interface with emission in the low-loss telecommunications band. Vanadium (V4+) defects in silicon carbide (SiC) meet this requirement, emitting zero-phonon lines (ZPLs) throughout the telecom O-band in both the 4H- and 6H-SiC polytypes while retaining an addressable electron and nuclear spin system [1,2]. Although the orbital and spin structure of these defects has been characterized in detail, the polarization selection rules have not been fully mapped experimentally. Here we present polarization-dependent photoluminescence (PL) measurements of vanadium ZPLs in 4H- and 6H-SiC at cryogenic temperature, of two scattering geometries: edge and face-on (emission wavevector perpendicular and parallel to the crystal c-axis, respectively). Emission from two of the four α sites, (α2 and α3) and the 6H-SiC γ sites, are polarized parallel to the c-axis (σ-polarized), whereas emission from α1 and α4 are polarized perpendicular to the c-axis (π-polarized). Additionally, we report preliminary, lower signal measurements of the \b{eta} sites.
ER -