Electrically tunable, two-photon interference from remote silicon-vacancy centers in industrial silicon carbide
Abstract
Distributed quantum networks rely on spatially separated, independently operated quantum systems as network nodes, whose emitted photons must be interfered with high visibility to establish end-to-end entanglement. Crucially, for network-relevant applications, high visibilities must be achieved over prolonged timescales to reduce overheads for error correction, and to increase network rates. Here, we demonstrate experimentally that silicon vacancy VSi color centers in silicon carbide (SiC) achieve these requirements, notably in a mass-deployable fashion. We integrate VSi centers in different industrial-grade SiC p-i-n diodes, which are controlled via voltage biassing. This way, we demonstrate both, spectral overlapping of 19 randomly selected VSi centers in different diodes, as well as spectral narrowing close to the lifetime limit, i.e., typically below 60 MHz. Notably, these performance parameters are long-term stable, e.g., readjusting the p-i-n diode bias is required only every 8.4 hours, which reduces significantly the overall experimental overhead. We then use these assets to demonstrate high-quality two-photon interference between VSi centers located in two different cryostat setups, which are spatially separated by two meters. Notably, we perform a 26-days long measurement campaign, demonstrating two-photon interference with state-of-the-art raw interference visibilities of 82%, which aligns with the current state-of-the-art. These results establish VSi centers in industry-grade SiC devices as a scalable, spectrally stable building block for distributed quantum networks.
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BibTeX
@misc{hrunski2026electrically,
title = {{Electrically tunable, two-photon interference from remote silicon-vacancy centers in industrial silicon carbide}},
author = {Fedor Dzmitryevich Hrunski and Daniel Scheller and Maximilian Hollendonner and Kim Ullerich and Shravan Kumar Parthasarathy and Chiun Fu and Andre Pointner and Wolfgang Knolle and Florian Kaiser and Durga Bhaktavatsala Rao Dasari and Roland Nagy},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.09805},
eprint = {2609.09805},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.09805},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Electrically tunable, two-photon interference from remote silicon-vacancy centers in industrial silicon carbide
AU - Fedor Dzmitryevich Hrunski
AU - Daniel Scheller
AU - Maximilian Hollendonner
AU - Kim Ullerich
AU - Shravan Kumar Parthasarathy
AU - Chiun Fu
AU - Andre Pointner
AU - Wolfgang Knolle
AU - Florian Kaiser
AU - Durga Bhaktavatsala Rao Dasari
AU - Roland Nagy
PY - 2026
DA - 2026/09/09
PB - arXiv
DO - 10.48550/arxiv.2609.09805
UR - https://arxiv.org/abs/2609.09805
AB - Distributed quantum networks rely on spatially separated, independently operated quantum systems as network nodes, whose emitted photons must be interfered with high visibility to establish end-to-end entanglement. Crucially, for network-relevant applications, high visibilities must be achieved over prolonged timescales to reduce overheads for error correction, and to increase network rates. Here, we demonstrate experimentally that silicon vacancy V_Si color centers in silicon carbide (SiC) achieve these requirements, notably in a mass-deployable fashion. We integrate V_Si centers in different industrial-grade SiC p-i-n diodes, which are controlled via voltage biassing. This way, we demonstrate both, spectral overlapping of 19 randomly selected V_Si centers in different diodes, as well as spectral narrowing close to the lifetime limit, i.e., typically below 60 MHz. Notably, these performance parameters are long-term stable, e.g., readjusting the p-i-n diode bias is required only every 8.4 hours, which reduces significantly the overall experimental overhead. We then use these assets to demonstrate high-quality two-photon interference between V_Si centers located in two different cryostat setups, which are spatially separated by two meters. Notably, we perform a 26-days long measurement campaign, demonstrating two-photon interference with state-of-the-art raw interference visibilities of 82%, which aligns with the current state-of-the-art. These results establish V_Si centers in industry-grade SiC devices as a scalable, spectrally stable building block for distributed quantum networks.
ER -