High-quality, deep formation and identification of oxygen-vacancy defects in silicon carbide
Abstract
Optically addressable paramagnetic defects in silicon carbide (SiC) are attractive for scalable quantum technologies such as quantum sensing. PL5, PL6, and PL7 are promising defects for their high brightness and spin-readout contrast. Although generation by oxygen implantation has been reported very recently, nonuniform spin and optical properties and the limited generation depth of implanted defects hinder both high-sensitivity sensing and conclusive microscopic identification. Here we engineer high-quality defects by decoupling oxygen incorporation and defect formation, realizing highly homogeneous spin-resonance frequencies as well as narrow optical linewidths and long T2* coherence time. Further, we demonstrate defect formation beyond the ion range utilizing oxygen diffusion, exceptional among impurities in SiC. We further provide hyperfine-interaction statistics of 17O and host nuclei across many PL6 defects, making the oxygen-vacancy origin conclusive. Together, the microscopic identification and the demonstrated formation route establish a foundation for developing the oxygen-vacancy spin defect into a versatile quantum platform.
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BibTeX
@misc{shiotani2026highquality,
title = {{High-quality, deep formation and identification of oxygen-vacancy defects in silicon carbide}},
author = {Ryo Shiotani and Fu-Chieh Chuang and Mitsuaki Kaneko and Tetsuri Nishikawa and Hiroshi Abe and Taiga Matsuoka and Shigehito Miki and Kazuki Okajima and Takeshi Ohshima and Yoshihiko Kanemitsu and Tsunenobu Kimoto and Naoya Morioka and Norikazu Mizuochi},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.32642},
eprint = {2610.32642},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.32642},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - High-quality, deep formation and identification of oxygen-vacancy defects in silicon carbide
AU - Ryo Shiotani
AU - Fu-Chieh Chuang
AU - Mitsuaki Kaneko
AU - Tetsuri Nishikawa
AU - Hiroshi Abe
AU - Taiga Matsuoka
AU - Shigehito Miki
AU - Kazuki Okajima
AU - Takeshi Ohshima
AU - Yoshihiko Kanemitsu
AU - Tsunenobu Kimoto
AU - Naoya Morioka
AU - Norikazu Mizuochi
PY - 2026
DA - 2026/10/23
PB - arXiv
DO - 10.48550/arxiv.2610.32642
UR - https://arxiv.org/abs/2610.32642
AB - Optically addressable paramagnetic defects in silicon carbide (SiC) are attractive for scalable quantum technologies such as quantum sensing. PL5, PL6, and PL7 are promising defects for their high brightness and spin-readout contrast. Although generation by oxygen implantation has been reported very recently, nonuniform spin and optical properties and the limited generation depth of implanted defects hinder both high-sensitivity sensing and conclusive microscopic identification. Here we engineer high-quality defects by decoupling oxygen incorporation and defect formation, realizing highly homogeneous spin-resonance frequencies as well as narrow optical linewidths and long T2* coherence time. Further, we demonstrate defect formation beyond the ion range utilizing oxygen diffusion, exceptional among impurities in SiC. We further provide hyperfine-interaction statistics of 17O and host nuclei across many PL6 defects, making the oxygen-vacancy origin conclusive. Together, the microscopic identification and the demonstrated formation route establish a foundation for developing the oxygen-vacancy spin defect into a versatile quantum platform.
ER -