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Peer-reviewedPublisher termsPhysical Review B

Self-induced spin-orbit torque switching in a synthetic antiferromagnetic Co 2 MnGa /MnGa bilayer

  • Rongkun Han
  • Haohang Cheng
  • Dahai Wei
  • Yuan Lu
  • Jianhua Zhao
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Abstract

The large intrinsic spin current in magnetic Weyl semimetals (WSMs) provides a promising platform for spin-orbit torque (SOT) devices. Here, we demonstrate SOTdriven magnetization switching in a synthetic antiferromagnet (SAF) composed of a Co2MnGa(CMG)/MnGa bilayer. In this heavy metal-free structure, CMG film functions simultaneously as a spin current source and as a magnetic layer. Macrospin simulations confirm the self-induced switching mechanism in the bilayer. The SOT generated by CMG switches the MnGa layer, which in turn triggers the reversal of the CMG layer via strong antiferromagnetic exchange coupling. These results elucidate the spin dynamics in SAFs and provide a new pathway toward SOT devices with selfinduced magnetization switching.

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Cite

BibTeXRIS
BibTeX
@article{han2026selfinduced,
  title = {{Self-induced spin-orbit torque switching in a synthetic antiferromagnetic Co 2 MnGa /MnGa bilayer}},
  author = {Rongkun Han and Haohang Cheng and Dahai Wei and Yuan Lu and Jianhua Zhao},
  journal = {Physical Review B},
  year = {2026},
  month = sep,
  doi = {10.1103/byz8-31yp},
  eprint = {2610.09885},
  archivePrefix = {arXiv},
  url = {https://hal.science/hal-05776483v1},
}
RIS
TY  - JOUR
TI  - Self-induced spin-orbit torque switching in a synthetic antiferromagnetic Co 2 MnGa /MnGa bilayer
AU  - Rongkun Han
AU  - Haohang Cheng
AU  - Dahai Wei
AU  - Yuan Lu
AU  - Jianhua Zhao
PY  - 2026
DA  - 2026/09/02
JO  - Physical Review B
DO  - 10.1103/byz8-31yp
UR  - https://hal.science/hal-05776483v1
AB  - The large intrinsic spin current in magnetic Weyl semimetals (WSMs) provides a promising platform for spin-orbit torque (SOT) devices. Here, we demonstrate SOTdriven magnetization switching in a synthetic antiferromagnet (SAF) composed of a Co2MnGa(CMG)/MnGa bilayer. In this heavy metal-free structure, CMG film functions simultaneously as a spin current source and as a magnetic layer. Macrospin simulations confirm the self-induced switching mechanism in the bilayer. The SOT generated by CMG switches the MnGa layer, which in turn triggers the reversal of the CMG layer via strong antiferromagnetic exchange coupling. These results elucidate the spin dynamics in SAFs and provide a new pathway toward SOT devices with selfinduced magnetization switching.
SN  - 2469-9950
SN  - 2469-9969
ER  -