Programmable Asymmetric Spin-Orbit Torque Switching for Spin Logic
Abstract
Spin logic devices provide a promising route toward ultralow-power and nonvolatile information processing. In this work, we demonstrate field-free spin-orbit torque-induced asymmetric magnetization switching in in-plane anisotropy (IMA) and perpendicular magnetic anisotropy heterostructures, characterized by different critical switching currents under opposite current polarities. Combined experiments and macrospin simulations reveal that the asymmetric switching originates from an in-plane effective field Hy , which breaks the Myz mirror symmetry of the system. By controlling the magnetization direction of the IMA layer, both the switching polarity and bias direction can be tuned. Building on four distinct types of asymmetric switching behaviors, we realize a reconfigurable spin logic operation within a single Hall-bar device. These results clarify the physical origin of asymmetric magnetization switching and demonstrate an approach for realizing reconfigurable spin logic devices.
Related
- Initialization-free ultralow-power programmable spin-orbit torque logic devices enabled by chirally asymmetric switching
- Demonstration of room-temperature, magnetic-field-free, and ultralow-power spin-orbit torque logic device based on composition-uniform van der Waals magnet Fe3GaTe2
- Self-induced spin-orbit torque switching in a synthetic antiferromagnetic Co 2 MnGa /MnGa bilayer
- Néel vector switching by magnetization-dependent layer-resolved spin-orbit torque
- Orbital and Spin–Orbit Torque Interplay in Ta/W-Based Magnetic Tunnel Junctions with Vertical Nonlocal Switching
BibTeX
@article{han2026programmable,
title = {{Programmable Asymmetric Spin-Orbit Torque Switching for Spin Logic}},
author = {Rongkun Han and Dahai Wei and Jianhua Zhao and Yuan Lu},
journal = {Physical Review Applied},
year = {2026},
month = oct,
doi = {10.1103/gv8b-nd7t},
eprint = {2610.09950},
archivePrefix = {arXiv},
url = {https://hal.science/hal-05781722v1},
note = {CC BY 4.0},
}
RIS
TY - JOUR
TI - Programmable Asymmetric Spin-Orbit Torque Switching for Spin Logic
AU - Rongkun Han
AU - Dahai Wei
AU - Jianhua Zhao
AU - Yuan Lu
PY - 2026
DA - 2026/10/06
JO - Physical Review Applied
DO - 10.1103/gv8b-nd7t
UR - https://hal.science/hal-05781722v1
AB - Spin logic devices provide a promising route toward ultralow-power and nonvolatile information processing. In this work, we demonstrate field-free spin-orbit torque-induced asymmetric magnetization switching in in-plane anisotropy (IMA) and perpendicular magnetic anisotropy heterostructures, characterized by different critical switching currents under opposite current polarities. Combined experiments and macrospin simulations reveal that the asymmetric switching originates from an in-plane effective field Hy , which breaks the Myz mirror symmetry of the system. By controlling the magnetization direction of the IMA layer, both the switching polarity and bias direction can be tuned. Building on four distinct types of asymmetric switching behaviors, we realize a reconfigurable spin logic operation within a single Hall-bar device. These results clarify the physical origin of asymmetric magnetization switching and demonstrate an approach for realizing reconfigurable spin logic devices.
SN - 2331-7019
ER -