Individual Vanadium Dopants Form Deep In-Gap States in Monolayer WS2
Abstract
Point defects in atomically thin materials have a strong impact on physical properties and those that induce in-gap states are advantageous for quantum information science and engineering (QISE). However, dopant engineering consisting of well-controlled synthesis and robust identification of in-gap states is challenging. In this work, we addressed this challenge by first using finely tuned chemical vapor deposition to incorporate vanadium dopants into a monolayer WS2 (V-WS2). Next, we utilized a suite of scanned probe microscopy techniques to identify and characterize individual dopants. The latter included conductive atomic force microscopy (cAFM), low temperature scanning tunneling microscopy and spectroscopy (STM/STS), and scanning transmission electron microscopy and unambiguously revealed that vanadium dopants form deep in-gap states 0.35 eV above the valence band maximum in V-WS2. Our experimental results are well supported by first principles calculations and taken together demonstrate that V-WS2 is a promising platform for QISE applications.
Versions
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BibTeX
@misc{zhu2026individual,
title = {{Individual Vanadium Dopants Form Deep In-Gap States in Monolayer WS2}},
author = {Tianhui Zhu and Carlos A. Gonzalez and Shihao Tu and Søren Tornøe and Ivan Pelayo and Dong-Rong Wu and Zhehao Ge and Hem Prasad Bhusal and Kenji Watanabe and Takashi Taniguchi and Nobuhiko P. Kobayashi and Yuan Ping and Jairo Velasco Jr. and Aiming Yan},
howpublished = {arXiv},
year = {2026},
month = aug,
doi = {10.48550/arxiv.2608.15551},
eprint = {2608.15551},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2608.15551},
}
RIS
TY - UNPB
TI - Individual Vanadium Dopants Form Deep In-Gap States in Monolayer WS2
AU - Tianhui Zhu
AU - Carlos A. Gonzalez
AU - Shihao Tu
AU - Søren Tornøe
AU - Ivan Pelayo
AU - Dong-Rong Wu
AU - Zhehao Ge
AU - Hem Prasad Bhusal
AU - Kenji Watanabe
AU - Takashi Taniguchi
AU - Nobuhiko P. Kobayashi
AU - Yuan Ping
AU - Jairo Velasco Jr.
AU - Aiming Yan
PY - 2026
DA - 2026/08/16
PB - arXiv
DO - 10.48550/arxiv.2608.15551
UR - https://arxiv.org/abs/2608.15551
AB - Point defects in atomically thin materials have a strong impact on physical properties and those that induce in-gap states are advantageous for quantum information science and engineering (QISE). However, dopant engineering consisting of well-controlled synthesis and robust identification of in-gap states is challenging. In this work, we addressed this challenge by first using finely tuned chemical vapor deposition to incorporate vanadium dopants into a monolayer WS2 (V-WS2). Next, we utilized a suite of scanned probe microscopy techniques to identify and characterize individual dopants. The latter included conductive atomic force microscopy (cAFM), low temperature scanning tunneling microscopy and spectroscopy (STM/STS), and scanning transmission electron microscopy and unambiguously revealed that vanadium dopants form deep in-gap states 0.35 eV above the valence band maximum in V-WS2. Our experimental results are well supported by first principles calculations and taken together demonstrate that V-WS2 is a promising platform for QISE applications.
ER -