A Si-on-SiC Platform for Interfacing with Vanadium Dopants in the Telecom O-Band
Abstract
Vanadium color centers in silicon carbide (SiC) offer telecom O-band emission, sub-microsecond optical lifetimes, and second-scale spin relaxation times, rendering them promising candidates for quantum network nodes. However, efficient photon extraction from the high-refractive-index SiC host remains challenging. Here, we introduce a silicon-on-SiC heterogeneous photonic platform in which silicon nanocavities evanescently couple to shallow vanadium dopants in commercial 4H-SiC, enabling efficient zero-phonon line (ZPL) collection under resonant excitation. In as-grown ensembles, we observe Purcell-enhanced photoluminescence with transient spectral hole burning linewidths of 50 MHz on microsecond timescales. In dilute implanted samples, we isolate individual vanadium centers with high-purity single photon emission and a Purcell-enhanced lifetime of 109 ns. The entire optical interface operates through a single lensed fiber, including a 905 nm repump laser that recovers the vanadium charge state with 95% efficiency. These results establish Si-on-SiC as a scalable, foundry-compatible platform for telecom-wavelength spin-photon interfaces.
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BibTeX
@misc{draher2026sionsic,
title = {{A Si-on-SiC Platform for Interfacing with Vanadium Dopants in the Telecom O-Band}},
author = {Timothy Draher and Nolan Bitner and Vasileios Niaouris and Claire E. McDermott and David Czaplewski and Supratik Guha and David D. Awschalom and F. Joseph Heremans and Alan M. Dibos},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.35702},
eprint = {2609.35702},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.35702},
note = {CC BY-NC-ND 4.0},
}
RIS
TY - UNPB
TI - A Si-on-SiC Platform for Interfacing with Vanadium Dopants in the Telecom O-Band
AU - Timothy Draher
AU - Nolan Bitner
AU - Vasileios Niaouris
AU - Claire E. McDermott
AU - David Czaplewski
AU - Supratik Guha
AU - David D. Awschalom
AU - F. Joseph Heremans
AU - Alan M. Dibos
PY - 2026
DA - 2026/09/28
PB - arXiv
DO - 10.48550/arxiv.2609.35702
UR - https://arxiv.org/abs/2609.35702
AB - Vanadium color centers in silicon carbide (SiC) offer telecom O-band emission, sub-microsecond optical lifetimes, and second-scale spin relaxation times, rendering them promising candidates for quantum network nodes. However, efficient photon extraction from the high-refractive-index SiC host remains challenging. Here, we introduce a silicon-on-SiC heterogeneous photonic platform in which silicon nanocavities evanescently couple to shallow vanadium dopants in commercial 4H-SiC, enabling efficient zero-phonon line (ZPL) collection under resonant excitation. In as-grown ensembles, we observe Purcell-enhanced photoluminescence with transient spectral hole burning linewidths of 50 MHz on microsecond timescales. In dilute implanted samples, we isolate individual vanadium centers with high-purity single photon emission and a Purcell-enhanced lifetime of 109 ns. The entire optical interface operates through a single lensed fiber, including a 905 nm repump laser that recovers the vanadium charge state with 95% efficiency. These results establish Si-on-SiC as a scalable, foundry-compatible platform for telecom-wavelength spin-photon interfaces.
ER -