Solution-Shearing Self-Assembly of Hydrothermally Synthesized Tellurium Nanowires for Fabricating Field-Effect Transistors with Wafer-Scale Uniformity
- 1School of Advanced Materials Science and Engineering, , Suwon 16419, Republic of Korea;
- 2Department of Smart Fab. Technology, , Suwon 16419, Republic of Korea; (M.P.); (Y.T.); (H.-D.L.); (J.-W.K.)
- 3College of Engineering, , Ningbo 315200, China
Abstract
Tellurium nanowires (TeNWs), a typical p-type semiconductor, have attracted significant attention in field-effect transistors (FETs) due to their narrow bandgap and high carrier mobility properties. However, fabricating large-area electronic devices with uniform performance remains a major challenge. In this study, we report a facile solution-shearing self-assembling strategy for fabricating TeNW-FETs with high-performance and uniformity. The solution-shearing process occurs at the interface during relative motion between the substrate and TeNW dispersion, enabling the TeNWs to reorient and adhere to the substrate, forming a uniform nanowire network. The transfer characteristics of TeNW-FETs reveal highly uniform electrical performance, and FET performance is strongly modulated by dispersion concentrations. Moreover, we investigated the impact of the solution-shearing direction on the device performance. The effective field-effect mobility of FETs with channels perpendicular to the substrate movement direction was approximately 12.1% lower than that of FETs with channels parallel to the movement direction. To further demonstrate scalability, we fabricated transistor arrays containing 324 individual FETs on a 4-inch Si/SiO2 wafer, achieving 100% functional device yield and good performance uniformity. The devices exhibited an average ION/OFF ratio of 6.9 × 102, mobility (μeff) of 24.3 cm2 V−1 s−1, subthreshold swing (SS) of 7.9 V dec−1 and threshold voltage (VTH) of 12.0 V.
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BibTeX
@article{yang2026solutionshearing,
title = {{Solution-Shearing Self-Assembly of Hydrothermally Synthesized Tellurium Nanowires for Fabricating Field-Effect Transistors with Wafer-Scale Uniformity}},
author = {Hao Yang and Mose Park and Yanjin Tang and Hyun-Dong Lee and Ji-Won Kang and Zhiyi Lyu and Hoo-Jeong Lee},
journal = {Nanomaterials (Basel, Switzerland)},
year = {2026},
month = oct,
doi = {10.3390/nano16191251},
url = {https://europepmc.org/article/PMC/PMC13667251},
note = {CC BY},
}
RIS
TY - JOUR
TI - Solution-Shearing Self-Assembly of Hydrothermally Synthesized Tellurium Nanowires for Fabricating Field-Effect Transistors with Wafer-Scale Uniformity
AU - Hao Yang
AU - Mose Park
AU - Yanjin Tang
AU - Hyun-Dong Lee
AU - Ji-Won Kang
AU - Zhiyi Lyu
AU - Hoo-Jeong Lee
PY - 2026
DA - 2026/10/01
JO - Nanomaterials (Basel, Switzerland)
DO - 10.3390/nano16191251
UR - https://europepmc.org/article/PMC/PMC13667251
AB - Tellurium nanowires (TeNWs), a typical p-type semiconductor, have attracted significant attention in field-effect transistors (FETs) due to their narrow bandgap and high carrier mobility properties. However, fabricating large-area electronic devices with uniform performance remains a major challenge. In this study, we report a facile solution-shearing self-assembling strategy for fabricating TeNW-FETs with high-performance and uniformity. The solution-shearing process occurs at the interface during relative motion between the substrate and TeNW dispersion, enabling the TeNWs to reorient and adhere to the substrate, forming a uniform nanowire network. The transfer characteristics of TeNW-FETs reveal highly uniform electrical performance, and FET performance is strongly modulated by dispersion concentrations. Moreover, we investigated the impact of the solution-shearing direction on the device performance. The effective field-effect mobility of FETs with channels perpendicular to the substrate movement direction was approximately 12.1% lower than that of FETs with channels parallel to the movement direction. To further demonstrate scalability, we fabricated transistor arrays containing 324 individual FETs on a 4-inch Si/SiO2 wafer, achieving 100% functional device yield and good performance uniformity. The devices exhibited an average ION/OFF ratio of 6.9 × 102, mobility (μeff) of 24.3 cm2 V−1 s−1, subthreshold swing (SS) of 7.9 V dec−1 and threshold voltage (VTH) of 12.0 V.
SN - 2079-4991
ER -