Enhancing charge stability of Ge quantum well heterostructures via SiGe layer composition engineering

Abstract

Composition modulation is a powerful technique for designing materials with tailored properties, fueling the development of advanced semiconductor devices. In this work, we have implemented this technique into Ge quantum well heterostructures, offering a promising avenue to address the critical challenge of charge stability in spin qubit devices. Harnessing the atomic-scale precision of molecular beam epitaxy, we have engineered the band structure of the SiGe top barrier via graded composition modulation, thereby reducing charge accumulation states at the SiGe-dielectric interface and strengthening the effective confinement to the hole gases in the Ge quantum wells. The enhanced charge stability of composition-modulated SiGe/Ge quantum well heterostructures is confirmed in Hall devices, featuring an enlarged stable gate voltage range. We have further fabricated quantum dot devices from the composition-modulated SiGe/Ge quantum well heterostructures and observed remarkably low charge noise with an averaged amplitude of 0.46 μeV/√(Hz) at 1 Hz---the lowest reported value for Ge quantum wells grown on silicon. This exceptional charge stability of the quantum dots persists in the few-hole regime, with no observable voltage drift over ∼hours. With reduced charge noise and enhanced energy stability, composition-modulated SiGe/Ge heterostructures exhibit significant potential for applications in building high-performance quantum devices, including spin qubits with a long coherence time.

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Cite

BibTeX RIS

BibTeX

@misc{huang2026enhancing,
  title = {{Enhancing charge stability of Ge quantum well heterostructures via SiGe layer composition engineering}},
  author = {Ding-Ming Huang and Jun-Hang Liu and Han Gao and Jie-Yin Zhang and Jian-Huan Wang and Fang-Ze Liu and Xin-Yu Zhou and Yi Luo and Bin-Xiao Fu and Xiao-Fei Liu and Ji-Yin Wang and Jian-Jun Zhang and H. Q. Xu},
  howpublished = {arXiv},
  year = {2026},
  month = sep,
  doi = {10.48550/arxiv.2609.11214},
  eprint = {2609.11214},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2609.11214},
  note = {CC BY-NC-ND 4.0},
}

RIS

TY  - UNPB
TI  - Enhancing charge stability of Ge quantum well heterostructures via SiGe layer composition engineering
AU  - Ding-Ming Huang
AU  - Jun-Hang Liu
AU  - Han Gao
AU  - Jie-Yin Zhang
AU  - Jian-Huan Wang
AU  - Fang-Ze Liu
AU  - Xin-Yu Zhou
AU  - Yi Luo
AU  - Bin-Xiao Fu
AU  - Xiao-Fei Liu
AU  - Ji-Yin Wang
AU  - Jian-Jun Zhang
AU  - H. Q. Xu
PY  - 2026
DA  - 2026/09/10
PB  - arXiv
DO  - 10.48550/arxiv.2609.11214
UR  - https://arxiv.org/abs/2609.11214
AB  - Composition modulation is a powerful technique for designing materials with tailored properties, fueling the development of advanced semiconductor devices. In this work, we have implemented this technique into Ge quantum well heterostructures, offering a promising avenue to address the critical challenge of charge stability in spin qubit devices. Harnessing the atomic-scale precision of molecular beam epitaxy, we have engineered the band structure of the SiGe top barrier via graded composition modulation, thereby reducing charge accumulation states at the SiGe-dielectric interface and strengthening the effective confinement to the hole gases in the Ge quantum wells. The enhanced charge stability of composition-modulated SiGe/Ge quantum well heterostructures is confirmed in Hall devices, featuring an enlarged stable gate voltage range. We have further fabricated quantum dot devices from the composition-modulated SiGe/Ge quantum well heterostructures and observed remarkably low charge noise with an averaged amplitude of 0.46 μeV/√(Hz) at 1 Hz---the lowest reported value for Ge quantum wells grown on silicon. This exceptional charge stability of the quantum dots persists in the few-hole regime, with no observable voltage drift over ∼hours. With reduced charge noise and enhanced energy stability, composition-modulated SiGe/Ge heterostructures exhibit significant potential for applications in building high-performance quantum devices, including spin qubits with a long coherence time.
ER  -

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