Remote epitaxy beyond polarity
Abstract
Remote epitaxy through a monolayer two-dimensional material-covered substrate establishes a crystallographic registry across the van der Waals (vdW) surface that enables the epitaxial growth, lift-off and transfer of single-crystalline films. A central belief in remote epitaxy is that the substrate facilitating the phenomenon must be a material with strong ionicity, as the interatomic electrostatic potential fluctuation in covalent and metallic materials is substantially attenuated by two-dimensional materials. Here, we show remote epitaxy is possible when the substrate is a metallic or covalently bonded material and experimentally demonstrate non-polar remote homo- and heteroepitaxy across a wide range of material systems, including both metals and semiconductors. The achieved non-polar remote interactions are designed and engineered by harnessing substrate conductivity and vicinal surface step-edge density. These findings indicate that remote epitaxy is universal and applicable to ionic, metallic, and covalent materials, expanding its capabilities and stimulating a plethora of new fundamental scientific questions about the mechanism of remote epitaxy.
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BibTeX
@misc{fu2026remote,
title = {{Remote epitaxy beyond polarity}},
author = {Ching-Tai Fu and Pei-Jan Hung and Xudong Li and Xiaolong Zhu and Yu Han and Sayantan Mahapatra and Zhiheng Zhao and Qingsong Fan and Xubing Wu and Qizhang Li and Chenxi Sui and Zirui Zhou and Ting-Hsuan Chen and Cheng-Hao Lei and Ivan Kuzmenko and Xiaobing Zuo and Byeongdu Lee and Alexander S. Filatov and Jeffrey R. Guest and Fengyuan Shi and Yuzi Liu and Hua Zhou and Yunfeng Shi and Po-Chun Hsu},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.05365},
eprint = {2609.05365},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.05365},
}
RIS
TY - UNPB
TI - Remote epitaxy beyond polarity
AU - Ching-Tai Fu
AU - Pei-Jan Hung
AU - Xudong Li
AU - Xiaolong Zhu
AU - Yu Han
AU - Sayantan Mahapatra
AU - Zhiheng Zhao
AU - Qingsong Fan
AU - Xubing Wu
AU - Qizhang Li
AU - Chenxi Sui
AU - Zirui Zhou
AU - Ting-Hsuan Chen
AU - Cheng-Hao Lei
AU - Ivan Kuzmenko
AU - Xiaobing Zuo
AU - Byeongdu Lee
AU - Alexander S. Filatov
AU - Jeffrey R. Guest
AU - Fengyuan Shi
AU - Yuzi Liu
AU - Hua Zhou
AU - Yunfeng Shi
AU - Po-Chun Hsu
PY - 2026
DA - 2026/09/04
PB - arXiv
DO - 10.48550/arxiv.2609.05365
UR - https://arxiv.org/abs/2609.05365
AB - Remote epitaxy through a monolayer two-dimensional material-covered substrate establishes a crystallographic registry across the van der Waals (vdW) surface that enables the epitaxial growth, lift-off and transfer of single-crystalline films. A central belief in remote epitaxy is that the substrate facilitating the phenomenon must be a material with strong ionicity, as the interatomic electrostatic potential fluctuation in covalent and metallic materials is substantially attenuated by two-dimensional materials. Here, we show remote epitaxy is possible when the substrate is a metallic or covalently bonded material and experimentally demonstrate non-polar remote homo- and heteroepitaxy across a wide range of material systems, including both metals and semiconductors. The achieved non-polar remote interactions are designed and engineered by harnessing substrate conductivity and vicinal surface step-edge density. These findings indicate that remote epitaxy is universal and applicable to ionic, metallic, and covalent materials, expanding its capabilities and stimulating a plethora of new fundamental scientific questions about the mechanism of remote epitaxy.
ER -