Nanocrystalline cubic boron arsenide growth on GaAs(100) by gas source molecular beam epitaxy
Abstract
Cubic boron arsenide (c-BAs) is a promising ultrahigh thermal conductivity semiconductor, but its direct synthesis on lattice-mismatched substrates remains challenging. Here, we demonstrate the synthesis of nanocrystalline c-BAs thin films on GaAs(100) substrates using gas source molecular beam epitaxy. X-ray photoelectron spectroscopy reveals an optimal growth temperature window of 250-400 C to maintain near stoichiometry and suppress severe arsenic loss. Surface and structural characterizations via atomic force microscopy, reflection high-energy electron diffraction, and grazing-incidence X-ray diffraction demonstrate a Volmer-Weber 3D island growth mode and a preferential crystallographic alignment with the GaAs substrate. High-resolution transmission electron microscopy confirms a chemically sharp interface without gallium interdiffusion into the c-BAs layer. These findings establish an initial step for the integration of c-BAs into advanced thermal and optoelectronic platforms.
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BibTeX
@misc{delmont2026nanocrystalline,
title = {{Nanocrystalline cubic boron arsenide growth on GaAs(100) by gas source molecular beam epitaxy}},
author = {Matthew A. Delmont and Yu Wu and Han-Hsuan Wu and Xiaoqing Pan and Christopher J. Palmstrom and Bolin Liao},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.27460},
eprint = {2610.27460},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.27460},
}
RIS
TY - UNPB
TI - Nanocrystalline cubic boron arsenide growth on GaAs(100) by gas source molecular beam epitaxy
AU - Matthew A. Delmont
AU - Yu Wu
AU - Han-Hsuan Wu
AU - Xiaoqing Pan
AU - Christopher J. Palmstrom
AU - Bolin Liao
PY - 2026
DA - 2026/10/20
PB - arXiv
DO - 10.48550/arxiv.2610.27460
UR - https://arxiv.org/abs/2610.27460
AB - Cubic boron arsenide (c-BAs) is a promising ultrahigh thermal conductivity semiconductor, but its direct synthesis on lattice-mismatched substrates remains challenging. Here, we demonstrate the synthesis of nanocrystalline c-BAs thin films on GaAs(100) substrates using gas source molecular beam epitaxy. X-ray photoelectron spectroscopy reveals an optimal growth temperature window of 250-400 C to maintain near stoichiometry and suppress severe arsenic loss. Surface and structural characterizations via atomic force microscopy, reflection high-energy electron diffraction, and grazing-incidence X-ray diffraction demonstrate a Volmer-Weber 3D island growth mode and a preferential crystallographic alignment with the GaAs substrate. High-resolution transmission electron microscopy confirms a chemically sharp interface without gallium interdiffusion into the c-BAs layer. These findings establish an initial step for the integration of c-BAs into advanced thermal and optoelectronic platforms.
ER -