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Peer-reviewedCC BYNano letters

Intrinsic Fermi Level Pinning and Reversible Depinning at Ultralow-Defect Epitaxial MoSe2/Au(111) Interfaces.

  • Guan-Hao Chen1,2
  • Cheng-Rong Hsing3,4
  • Li-Syuan Lu1,2
  • Po-Sen Mao1,5
  • Pei-Yu Chuang6
  • Yi Chou1
  • Yu-Shiuan Su1,7
  • Chih-Pin Lin8
  • Tuo-Hung Hou8
  • Juhn-Jong Lin1
  • Yi-Chia Chou9
  • Cheng-Maw Cheng1,6,10
3 more authors
  • Ching-Ming Wei11
  • Chun-Liang Lin1
  • Wen-Hao Chang1,2,5,12
12 affiliations
  1. 1Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu30010, Taiwan.
  2. 2Research Center for Applied Sciences, Academia Sinica, Taipei11529, Taiwan.
  3. 3Division of Natural Science, Center for General Education, Chang Gung University, Taoyuan City33302, Taiwan.
  4. 4Department of Artificial Intelligence, Chang Gung University, Taoyuan City33302, Taiwan.
  5. 5Research Center for Critical Issues, Academia Sinica, Tainan711010, Taiwan.
  6. 6National Synchrotron Radiation Research Center , Hsinchu300, Taiwan.
  7. 7Taiwan Instrument Research Institute, Hsinchu300092, Taiwan.
  8. 8Department of Electronics Engineering and Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu30010, Taiwan.
  9. 9Department of Materials Science and Engineering, National Taiwan University, Taipei10617, Taiwan.
  10. 10Department of Physics, National Sun Yat-sen University, Kaohsiung80424, Taiwan.
  11. 11Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei106923, Taiwan.
  12. 12Center for Emergent Functional Matter Science (CEFMS), National Yang Ming Chiao Tung University, Hsinchu30010, Taiwan.
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Abstract

Fermi level pinning (FLP) fundamentally limits contact engineering in two-dimensional semiconductors, yet its intrinsic origin remains obscured by the presence of interfacial disorder and defect-induced gap states. Although theoretical models attribute FLP to metal-induced gap states (MIGSs) and interface dipoles, direct experimental validation at an ideal van der Waals interface has remained elusive. Here, we establish an ultralow-defect epitaxial monolayer MoSe2/Au(111) interface (defect density ∼ 1.7 × 1010 cm-2) to directly probe its electronic structure using scanning tunneling spectroscopy and field-emission resonance. Despite the nearly pristine interface, we observe symmetric electron and hole Schottky barriers alongside pronounced work function lowering, demonstrating that FLP persists even without significant interfacial disorder. These measurements quantitatively support the MIGS-induced interface dipole model. Remarkably, selenium intercalation reversibly suppresses the interfacial dipole, restores the work function, and shifts the Fermi level, resulting in substantial depinning and establishing a strategy for band alignment engineering at van der Waals interfaces.

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Cite

BibTeXRIS
BibTeX
@article{chen2026intrinsic,
  title = {{Intrinsic Fermi Level Pinning and Reversible Depinning at Ultralow-Defect Epitaxial MoSe2/Au(111) Interfaces.}},
  author = {Guan-Hao Chen and Cheng-Rong Hsing and Li-Syuan Lu and Po-Sen Mao and Pei-Yu Chuang and Yi Chou and Yu-Shiuan Su and Chih-Pin Lin and Tuo-Hung Hou and Juhn-Jong Lin and Yi-Chia Chou and Cheng-Maw Cheng and Ching-Ming Wei and Chun-Liang Lin and Wen-Hao Chang},
  journal = {Nano letters},
  year = {2026},
  month = sep,
  doi = {10.1021/acs.nanolett.6c02384},
  url = {https://europepmc.org/article/MED/42916662},
  note = {CC BY},
}
RIS
TY  - JOUR
TI  - Intrinsic Fermi Level Pinning and Reversible Depinning at Ultralow-Defect Epitaxial MoSe2/Au(111) Interfaces.
AU  - Guan-Hao Chen
AU  - Cheng-Rong Hsing
AU  - Li-Syuan Lu
AU  - Po-Sen Mao
AU  - Pei-Yu Chuang
AU  - Yi Chou
AU  - Yu-Shiuan Su
AU  - Chih-Pin Lin
AU  - Tuo-Hung Hou
AU  - Juhn-Jong Lin
AU  - Yi-Chia Chou
AU  - Cheng-Maw Cheng
AU  - Ching-Ming Wei
AU  - Chun-Liang Lin
AU  - Wen-Hao Chang
PY  - 2026
DA  - 2026/09/01
JO  - Nano letters
DO  - 10.1021/acs.nanolett.6c02384
UR  - https://europepmc.org/article/MED/42916662
AB  - Fermi level pinning (FLP) fundamentally limits contact engineering in two-dimensional semiconductors, yet its intrinsic origin remains obscured by the presence of interfacial disorder and defect-induced gap states. Although theoretical models attribute FLP to metal-induced gap states (MIGSs) and interface dipoles, direct experimental validation at an ideal van der Waals interface has remained elusive. Here, we establish an ultralow-defect epitaxial monolayer MoSe2/Au(111) interface (defect density ∼ 1.7 × 1010 cm-2) to directly probe its electronic structure using scanning tunneling spectroscopy and field-emission resonance. Despite the nearly pristine interface, we observe symmetric electron and hole Schottky barriers alongside pronounced work function lowering, demonstrating that FLP persists even without significant interfacial disorder. These measurements quantitatively support the MIGS-induced interface dipole model. Remarkably, selenium intercalation reversibly suppresses the interfacial dipole, restores the work function, and shifts the Fermi level, resulting in substantial depinning and establishing a strategy for band alignment engineering at van der Waals interfaces.
SN  - 1530-6984
SN  - 1530-6992
ER  -