Investigation of Hopping Conduction and Its Impact on the Subthreshold and Transition Region Transport in Oxide Semiconductor Transistors by Magneto-Transport Measurements
Abstract
In this work, magneto-transport measurements, including Hall effects and magnetoresistance (MR) at various temperatures, are employed to directly probe the electron transport properties in crystalline indium oxide (In2O3) and amorphous indium-zinc oxide (IZO) transistors. For the first time, we develop a subgap density of states (DOS) extraction method based on the MR measurements at low temperature, considering both the interference and orbital shrinkage effects. The sign and magnitude of MR are used as direct evidence to distinguish the dominating transport mechanisms between hopping conduction and free-electron conduction. It is found that crystalline In2O3 exhibits a subgap DOS more than two orders of magnitude lower than that of amorphous IZO, together with a smaller localization radius of hopping sites. As a result, crystalline In2O3 not only enhances the carrier mobility but also significantly reduces the supply voltage (VDD) because of the smaller transition region enabled by the much-suppressed subgap DOS. This study reveals that structural disorder critically influences the device operation in the subthreshold and transition regions of oxide semiconductor transistors.
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BibTeX
@misc{wang2026investigation,
title = {{Investigation of Hopping Conduction and Its Impact on the Subthreshold and Transition Region Transport in Oxide Semiconductor Transistors by Magneto-Transport Measurements}},
author = {Chen Wang and Liankai Zheng and Kai Jiang and Jinxiu Zhao and Zhenyu Zhang and Xuefei Li and Mengwei Si},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.27464},
eprint = {2609.27464},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.27464},
}
RIS
TY - UNPB
TI - Investigation of Hopping Conduction and Its Impact on the Subthreshold and Transition Region Transport in Oxide Semiconductor Transistors by Magneto-Transport Measurements
AU - Chen Wang
AU - Liankai Zheng
AU - Kai Jiang
AU - Jinxiu Zhao
AU - Zhenyu Zhang
AU - Xuefei Li
AU - Mengwei Si
PY - 2026
DA - 2026/09/23
PB - arXiv
DO - 10.48550/arxiv.2609.27464
UR - https://arxiv.org/abs/2609.27464
AB - In this work, magneto-transport measurements, including Hall effects and magnetoresistance (MR) at various temperatures, are employed to directly probe the electron transport properties in crystalline indium oxide (In2O3) and amorphous indium-zinc oxide (IZO) transistors. For the first time, we develop a subgap density of states (DOS) extraction method based on the MR measurements at low temperature, considering both the interference and orbital shrinkage effects. The sign and magnitude of MR are used as direct evidence to distinguish the dominating transport mechanisms between hopping conduction and free-electron conduction. It is found that crystalline In2O3 exhibits a subgap DOS more than two orders of magnitude lower than that of amorphous IZO, together with a smaller localization radius of hopping sites. As a result, crystalline In2O3 not only enhances the carrier mobility but also significantly reduces the supply voltage (VDD) because of the smaller transition region enabled by the much-suppressed subgap DOS. This study reveals that structural disorder critically influences the device operation in the subthreshold and transition regions of oxide semiconductor transistors.
ER -