Hall-Density Collapse as Direct Evidence for Percolative Conduction Onset in Monolayer MoS2 Transistors
Abstract
The origin of the apparent metal-insulator transition in two-dimensional electron systems remains debated. Using temperature-dependent transport and Hall measurements on industry-relevant MoS2 monolayer FETs with amorphous HfO2 dielectrics, we establish classical percolation as the underlying mechanism. We report two complementary signatures of disorder-driven conduction onset: a temperature-independent Hall-density collapse as a function of absolute gate voltage and a vanishing activation energy at a characteristic carrier density nc, identified as the percolation threshold. These findings identify dielectric-interface disorder, rather than channel quality alone, as the key parameter governing device turn-on. The extracted activation barriers reach values substantially exceeding room-temperature thermal energies, indicating that disorder-driven conduction onset remains relevant well beyond cryogenic transport.
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BibTeX
@misc{upadya2026halldensity,
title = {{Hall-Density Collapse as Direct Evidence for Percolative Conduction Onset in Monolayer MoS$_2$ Transistors}},
author = {R. V. Upadya and M. Introna and X. Wu and C. J. L. de la Rosa and K. Banerjee and D. Lin and K. De Greve},
howpublished = {arXiv},
year = {2026},
month = nov,
doi = {10.48550/arxiv.2611.06815},
eprint = {2611.06815},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2611.06815},
}
RIS
TY - UNPB
TI - Hall-Density Collapse as Direct Evidence for Percolative Conduction Onset in Monolayer MoS_2 Transistors
AU - R. V. Upadya
AU - M. Introna
AU - X. Wu
AU - C. J. L. de la Rosa
AU - K. Banerjee
AU - D. Lin
AU - K. De Greve
PY - 2026
DA - 2026/11/04
PB - arXiv
DO - 10.48550/arxiv.2611.06815
UR - https://arxiv.org/abs/2611.06815
AB - The origin of the apparent metal-insulator transition in two-dimensional electron systems remains debated. Using temperature-dependent transport and Hall measurements on industry-relevant MoS_2 monolayer FETs with amorphous HfO_2 dielectrics, we establish classical percolation as the underlying mechanism. We report two complementary signatures of disorder-driven conduction onset: a temperature-independent Hall-density collapse as a function of absolute gate voltage and a vanishing activation energy at a characteristic carrier density n_c, identified as the percolation threshold. These findings identify dielectric-interface disorder, rather than channel quality alone, as the key parameter governing device turn-on. The extracted activation barriers reach values substantially exceeding room-temperature thermal energies, indicating that disorder-driven conduction onset remains relevant well beyond cryogenic transport.
ER -