Agentic TCAD Calibration Workflow for Oxide Semiconductor Transistors
Abstract
Experimental TCAD calibration is essential for predictive technology modeling of emerging oxide semiconductor transistors. However, it remains time-consuming and expert dependent because of model ambiguity. Multiple physical models and parameter sets can reproduce the same measured transfer characteristics, while local fitting alone cannot uniquely identify the underlying device physics. We present the first demonstration of an agentic TCAD calibration workflow for a fabricated bottom-gate In--W--O (BG-IWO) transistor. Starting from the measured transfer curve and device information, the workflow uses measurement--TCAD residuals and local sensitivity tests to select bounded parameter corrections or evaluate additional physical models, and accept only updates that improve device metrics. The LLM agent orchestrates the workflow, while Sentaurus governs the device physics. For the 2\%-W reference device, five agent-suggested updates yield a fixed calibrated model, reducing the multi-metric device objective J by 14.3×. Maximum Vth/Ion errors are 36.1~mV/0.022 decade for varying-drain-bias tests and 46.2~mV/0.062 decade for varying-channel-length tests, demonstrating model transferability across bias and geometry rather than a local parameter fit. W-composition tests provide process-sensitive insight. This agentic workflow provides a faster route to model development for emerging device technologies.
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BibTeX
@misc{jeong2026agentic,
title = {{Agentic TCAD Calibration Workflow for Oxide Semiconductor Transistors}},
author = {Gyujun Jeong and Junmo Lee and Sungwon Cho and Woohyun Hwang and Kwangyou Seo and Suhwan Lim and Wanki Kim and Daewon Ha and Rishi Ranade and Kihang Youn and Ram Cherukuri and Yiyi Wang and Asif Khan and Shimeng Yu},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.12184},
eprint = {2609.12184},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.12184},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Agentic TCAD Calibration Workflow for Oxide Semiconductor Transistors
AU - Gyujun Jeong
AU - Junmo Lee
AU - Sungwon Cho
AU - Woohyun Hwang
AU - Kwangyou Seo
AU - Suhwan Lim
AU - Wanki Kim
AU - Daewon Ha
AU - Rishi Ranade
AU - Kihang Youn
AU - Ram Cherukuri
AU - Yiyi Wang
AU - Asif Khan
AU - Shimeng Yu
PY - 2026
DA - 2026/09/14
PB - arXiv
DO - 10.48550/arxiv.2609.12184
UR - https://arxiv.org/abs/2609.12184
AB - Experimental TCAD calibration is essential for predictive technology modeling of emerging oxide semiconductor transistors. However, it remains time-consuming and expert dependent because of model ambiguity. Multiple physical models and parameter sets can reproduce the same measured transfer characteristics, while local fitting alone cannot uniquely identify the underlying device physics. We present the first demonstration of an agentic TCAD calibration workflow for a fabricated bottom-gate In--W--O (BG-IWO) transistor. Starting from the measured transfer curve and device information, the workflow uses measurement--TCAD residuals and local sensitivity tests to select bounded parameter corrections or evaluate additional physical models, and accept only updates that improve device metrics. The LLM agent orchestrates the workflow, while Sentaurus governs the device physics. For the 2\%-W reference device, five agent-suggested updates yield a fixed calibrated model, reducing the multi-metric device objective J by 14.3×. Maximum V_th/I_on errors are 36.1~mV/0.022 decade for varying-drain-bias tests and 46.2~mV/0.062 decade for varying-channel-length tests, demonstrating model transferability across bias and geometry rather than a local parameter fit. W-composition tests provide process-sensitive insight. This agentic workflow provides a faster route to model development for emerging device technologies.
ER -