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PreprintCC BY 4.0arXiv

Melting phase diagram of the two-dimensional electron solid in a perpendicular magnetic field

  • M. Yu. Melnikov
  • D. G. Smirnov
  • A. A. Shashkin
  • S. -H. Huang
  • C. ~W. Liu
  • S. V. Kravchenko
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Abstract

We determine the thermal melting phase diagram of the electron solid by measuring the onset density of the double-threshold voltage-current curves in the insulating state in the ultra-high mobility two-dimensional electron system in SiGe/Si/SiGe quantum wells at different temperatures in perpendicular magnetic fields. The introduction of a magnetic field leads to a considerable increase in the onset density, which is strongest at the lowest temperatures and decreases with increasing temperature, and the melting temperature increases with magnetic field. These data are in agreement with theoretical predictions. Unexpectedly, the melting temperature as a function of electron density in a fixed magnetic field reveals a plateau, which can be interpreted in terms of resonance modes in the crystallites.

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Cite

BibTeXRIS
BibTeX
@misc{melnikov2026melting,
  title = {{Melting phase diagram of the two-dimensional electron solid in a perpendicular magnetic field}},
  author = {M. Yu. Melnikov and D. G. Smirnov and A. A. Shashkin and S. -H. Huang and C. ~W. Liu and S. V. Kravchenko},
  howpublished = {arXiv},
  year = {2026},
  month = oct,
  doi = {10.48550/arxiv.2610.03513},
  eprint = {2610.03513},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2610.03513},
  note = {CC BY 4.0},
}
RIS
TY  - UNPB
TI  - Melting phase diagram of the two-dimensional electron solid in a perpendicular magnetic field
AU  - M. Yu. Melnikov
AU  - D. G. Smirnov
AU  - A. A. Shashkin
AU  - S. -H. Huang
AU  - C. ~W. Liu
AU  - S. V. Kravchenko
PY  - 2026
DA  - 2026/10/02
PB  - arXiv
DO  - 10.48550/arxiv.2610.03513
UR  - https://arxiv.org/abs/2610.03513
AB  - We determine the thermal melting phase diagram of the electron solid by measuring the onset density of the double-threshold voltage-current curves in the insulating state in the ultra-high mobility two-dimensional electron system in SiGe/Si/SiGe quantum wells at different temperatures in perpendicular magnetic fields. The introduction of a magnetic field leads to a considerable increase in the onset density, which is strongest at the lowest temperatures and decreases with increasing temperature, and the melting temperature increases with magnetic field. These data are in agreement with theoretical predictions. Unexpectedly, the melting temperature as a function of electron density in a fixed magnetic field reveals a plateau, which can be interpreted in terms of resonance modes in the crystallites.
ER  -