Room-Temperature Storage of Entanglement in a Silicon Carbide Quantum Node
Abstract
Robust entanglement at room temperature is a central challenge for solid-state quantum information processing and quantum-enhanced sensing. Here we demonstrate room-temperature storage of entanglement in a silicon carbide (SiC) quantum node by coherently transferring an electron-nuclear entangled state onto long-lived nuclear-spin memory qubits. Using a shallow single color center in 4H-SiC, conventionally denoted PL6, we realize a fully addressable three-qubit register composed of one electron-spin processor and two strongly coupled 29Si nuclear-spin memory qubits. This platform enables the deterministic generation of high-fidelity entangled states, including a nuclear-spin Bell state with a fidelity of 94 ± 2% and a three-qubit Greenberger-Horne-Zeilinger (GHZ)-type state with a fidelity of 89 ± 4%. By implementing a SWAP-gate protocol in the strong hyperfine-coupling regime, the electron-nuclear entanglement is transferred to the nuclear-spin memory with a fidelity of 92.5 ± 2.5%, extending the entanglement lifetime by a factor of 240. We further confirm the generality of this approach in an additional heterogeneous 29Si-13C nuclear-spin register and, through a statistical survey of 200 single PL6 centers, show that multi-nuclear-spin registers occur naturally with probabilities above 10%. These results position shallow SiC color centers as a powerful platform for entanglement-assisted quantum sensing and scalable room-temperature quantum technologies.
Versions
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BibTeX
@misc{ren2026roomtemperature,
title = {{Room-Temperature Storage of Entanglement in a Silicon Carbide Quantum Node}},
author = {Shuo Ren and Rui-Jian Liang and Qi-Cheng Hu and Zhen-Xuan He and Ji-Yang Zhou and Wu-Xi Lin and Zhi-He Hao and Tao Tu and Jin-Shi Xu and Chuan-Feng Li and Guang-Can Guo},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.13744},
eprint = {2609.13744},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.13744},
}
RIS
TY - UNPB
TI - Room-Temperature Storage of Entanglement in a Silicon Carbide Quantum Node
AU - Shuo Ren
AU - Rui-Jian Liang
AU - Qi-Cheng Hu
AU - Zhen-Xuan He
AU - Ji-Yang Zhou
AU - Wu-Xi Lin
AU - Zhi-He Hao
AU - Tao Tu
AU - Jin-Shi Xu
AU - Chuan-Feng Li
AU - Guang-Can Guo
PY - 2026
DA - 2026/09/12
PB - arXiv
DO - 10.48550/arxiv.2609.13744
UR - https://arxiv.org/abs/2609.13744
AB - Robust entanglement at room temperature is a central challenge for solid-state quantum information processing and quantum-enhanced sensing. Here we demonstrate room-temperature storage of entanglement in a silicon carbide (SiC) quantum node by coherently transferring an electron-nuclear entangled state onto long-lived nuclear-spin memory qubits. Using a shallow single color center in 4H-SiC, conventionally denoted PL6, we realize a fully addressable three-qubit register composed of one electron-spin processor and two strongly coupled ^29Si nuclear-spin memory qubits. This platform enables the deterministic generation of high-fidelity entangled states, including a nuclear-spin Bell state with a fidelity of 94 ± 2% and a three-qubit Greenberger-Horne-Zeilinger (GHZ)-type state with a fidelity of 89 ± 4%. By implementing a SWAP-gate protocol in the strong hyperfine-coupling regime, the electron-nuclear entanglement is transferred to the nuclear-spin memory with a fidelity of 92.5 ± 2.5%, extending the entanglement lifetime by a factor of 240. We further confirm the generality of this approach in an additional heterogeneous ^29Si-^13C nuclear-spin register and, through a statistical survey of 200 single PL6 centers, show that multi-nuclear-spin registers occur naturally with probabilities above 10%. These results position shallow SiC color centers as a powerful platform for entanglement-assisted quantum sensing and scalable room-temperature quantum technologies.
ER -