Vanadium doping induced valley asymmetries in WS2 monolayers
Abstract
Transition metal dichalcogenide (TMD) monolayers offer an innovative platform for encoding and manipulating information through the valley degree of freedom. While unique valley-related physical phenomena have been reported so far, practical applications still require advanced control over the valley polarization efficiency and the valley Zeeman effect. Recently, the introduction of spin-polarized metal atoms as substitutional defects was reported to break the time-reversal symmetry in TMD monolayers, consequently inducing a room-temperature ferromagnetic ordering and enhancing the valley-dependent optical responses. Here, we report valley asymmetries for vanadium-doped WS2 monolayers. With a given magnetic polarization, one valley exhibits larger Zeeman slope and degree of circular polarization than the other valley. Additionally, the overall degree of circular polarization in the doped samples is approximately twice that of the pristine WS2 monolayer. Density functional theory calculations in the doped structure show that different energy shifts in conduction band edges due to spin-dependent hybridization lead to different exciton energies between valleys, which is consistent with the experimental observations. Our results pave the way for valleytronic technologies based on defect-engineered two-dimensional materials.
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BibTeX
@misc{sousa2026vanadium,
title = {{Vanadium doping induced valley asymmetries in WS$_2$ monolayers}},
author = {Frederico B. Sousa and Boyang Zheng and Elizabeth Grace Houser and Paulo E. Faria Junior and Zhuohang Yu and Alessandra Ames and Gabriel A. D. Souza and Mingzu Liu and Gilmar Eugenio Marques and Leandro M. Malard and Mauricio Terrones and Vincent H. Crespi and Marcio D. Teodoro},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.22580},
eprint = {2609.22580},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.22580},
}
RIS
TY - UNPB
TI - Vanadium doping induced valley asymmetries in WS_2 monolayers
AU - Frederico B. Sousa
AU - Boyang Zheng
AU - Elizabeth Grace Houser
AU - Paulo E. Faria Junior
AU - Zhuohang Yu
AU - Alessandra Ames
AU - Gabriel A. D. Souza
AU - Mingzu Liu
AU - Gilmar Eugenio Marques
AU - Leandro M. Malard
AU - Mauricio Terrones
AU - Vincent H. Crespi
AU - Marcio D. Teodoro
PY - 2026
DA - 2026/09/18
PB - arXiv
DO - 10.48550/arxiv.2609.22580
UR - https://arxiv.org/abs/2609.22580
AB - Transition metal dichalcogenide (TMD) monolayers offer an innovative platform for encoding and manipulating information through the valley degree of freedom. While unique valley-related physical phenomena have been reported so far, practical applications still require advanced control over the valley polarization efficiency and the valley Zeeman effect. Recently, the introduction of spin-polarized metal atoms as substitutional defects was reported to break the time-reversal symmetry in TMD monolayers, consequently inducing a room-temperature ferromagnetic ordering and enhancing the valley-dependent optical responses. Here, we report valley asymmetries for vanadium-doped WS_2 monolayers. With a given magnetic polarization, one valley exhibits larger Zeeman slope and degree of circular polarization than the other valley. Additionally, the overall degree of circular polarization in the doped samples is approximately twice that of the pristine WS_2 monolayer. Density functional theory calculations in the doped structure show that different energy shifts in conduction band edges due to spin-dependent hybridization lead to different exciton energies between valleys, which is consistent with the experimental observations. Our results pave the way for valleytronic technologies based on defect-engineered two-dimensional materials.
ER -